SBOS980B May   2019  – March 2021 TLV9002-Q1 , TLV9004-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information for Dual Channel
    5. 7.5 Thermal Information for Quad Channel
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Rail-to-Rail Input
      3. 8.3.3 Rail-to-Rail Output
      4. 8.3.4 Overload Recovery
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 TLV900x-Q1 Low-Side, Current Sensing Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Single-Supply Photodiode Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Input and ESD Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

For VS = (V+) – (V–) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V), TA = 25 °C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage Vs = 5 V ±0.4 ±1.85 mV
Vs = 5 V, TA = –40°C to 125°C ±2 mV
dVOS/dT VOS vs temperature TA = –40°C to 125°C ±0.6 μV/°C
PSRR Power-supply rejection ratio VS = 1.8 to 5.5 V, VCM = (V–)
 
80 105 dB
INPUT VOLTAGE RANGE
VCM Common-mode voltage range No phase reversal, rail-to-rail input (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio VS = 1.8 V, (V–) – 0.1 V < VCM < (V+) – 1.4 V, 
TA = –40°C to 125°C
86 dB
VS = 5.5 V, (V–) – 0.1 V < VCM < (V+) – 1.4 V, 
TA = –40°C to 125°C
95 dB
VS = 5.5 V, (V–) – 0.1 V < VCM < (V+) + 0.1 V, 
TA = –40°C to 125°C
63 77 dB
VS = 1.8 V, (V–) – 0.1 V < VCM < (V+)+ 0.1 V, 
TA = –40°C to 125°C
68 dB
INPUT BIAS CURRENT
IB Input bias current Vs = 5 V ±5 pA
IOS Input offset current ±2 pA
NOISE
En Input voltage noise (peak-to-peak) ƒ = 0.1 Hz to 10 Hz, Vs = 5 V 4.7 μVPP
en Input voltage noise density ƒ = 1 kHz, Vs = 5 V 30 nV/√Hz
ƒ = 10 kHz, Vs = 5 V 27 nV/√Hz
in Input current noise density ƒ = 1 kHz, Vs = 5 V 23 fA/√Hz
INPUT CAPACITANCE
CID Differential 1.5 pF
CIC Common-mode 5 pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS = 5.5 V, (V–) + 0.05 V < VO < (V+) – 0.05 V,
RL = 10 kΩ
104 117 dB
VS = 1.8 V, (V–) + 0.04 V < VO < (V+) – 0.04 V,
RL = 10 kΩ
100 dB
VS = 1.8 V, (V–) + 0.1 V < VO < (V+) – 0.1 V,
RL = 2 kΩ
115 dB
VS = 5.5 V, (V–) + 0.15 V < VO < (V+) – 0.15 V,
RL = 2 kΩ
130 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product Vs = 5 V 1 MHz
φm Phase margin VS = 5.5 V, G = 1 78 degrees
SR Slew rate Vs = 5 V 2 V/µs
tS Settling time To 0.1%, VS = 5 V, 2 V Step , G = +1, CL = 100 pF 2.5 μs
To 0.01%, VS = 5 V, 2 V Step , G = +1, CL = 100 pF 3 μs
tOR Overload recovery time VS = 5 V, VIN × gain > VS 0.85 μs
THD+N Total harmonic distortion + noise VS = 5.5 V, VCM = 2.5 V, VO = 1 VRMS, G = +1,
f = 1 kHz, 80 kHz measurement BW
0.004 %
OUTPUT
VO Voltage output swing from supply rails VS = 5.5 V, RL = 10 kΩ 10 20 mV
VS = 5.5 V, RL = 2 kΩ 35 55 mV
ISC Short-circuit current Vs = 5.5 V ±40 mA
ZO Open-loop output impedance Vs = 5 V, f = 1 MHz 1200 Ω
POWER SUPPLY
VS Specified voltage range 1.8 (±0.9) 5.5 (±2.75) V
IQ Quiescent current per amplifier IO = 0 mA, VS = 5.5 V 60 80 µA
IO = 0 mA, VS = 5.5 V, TA = –40°C to 125°C 85 µA
Power-on time VS = 0 V to 5 V, to 90% IQ level 50 µs