SBOS943E February   2019  – August 2021 TLV9101 , TLV9102 , TLV9104

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information for Single Channel
    5. 6.5 Thermal Information for Dual Channel
    6. 6.6 Thermal Information for Quad Channel
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  EMI Rejection
      2. 7.3.2  Phase Reversal Protection
      3. 7.3.3  Thermal Protection
      4. 7.3.4  Capacitive Load and Stability
      5. 7.3.5  Common-Mode Voltage Range
      6. 7.3.6  Electrical Overstress
      7. 7.3.7  Overload Recovery
      8. 7.3.8  Typical Specifications and Distributions
      9. 7.3.9  Packages With an Exposed Thermal Pad
      10. 7.3.10 Shutdown
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 High Voltage Precision Comparator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 TINA-TI (Free Software Download)
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Capacitive Load and Stability

The TLV910x features a resistive output stage capable of driving moderate capacitive loads, and by leveraging an isolation resistor, the device can easily be configured to drive large capacitive loads. Increasing the gain enhances the ability of the amplifier to drive greater capacitive loads; see Figure 7-4 and Figure 7-5. The particular op amp circuit configuration, layout, gain, and output loading are some of the factors to consider when establishing whether an amplifier will be stable in operation.

GUID-CBFAC27F-BFA0-42FA-8136-853984C57034-low.gifFigure 7-4 Small-Signal Overshoot vs Capacitive Load (100-mV Output Step, G = 1)
GUID-5BE8A562-5E27-4CD8-8B34-544CF5B31D94-low.gifFigure 7-5 Small-Signal Overshoot vs Capacitive Load (100-mV Output Step, G = –1)

For additional drive capability in unity-gain configurations, improve capacitive load drive by inserting a small (10 Ω to 20 Ω) resistor, RISO, in series with the output, as shown in Figure 7-6. This resistor significantly reduces ringing and maintains DC performance for purely capacitive loads. However, if a resistive load is in parallel with the capacitive load, then a voltage divider is created, thus introducing a gain error at the output and slightly reducing the output swing. The error introduced is proportional to the ratio RISO / RL, and is generally negligible at low output levels. A high capacitive load drive makes the TLV910x well suited for applications such as reference buffers, MOSFET gate drives, and cable-shield drives. The circuit shown in Figure 7-6 uses an isolation resistor, RISO, to stabilize the output of an op amp. RISO modifies the open-loop gain of the system for increased phase margin.

GUID-3F8C8062-89BB-4C43-ACAE-7B84FC6FF0DF-low.gifFigure 7-6 Extending Capacitive Load Drive With the TLV9101