SPRS523N November   2008  – June 2020 TMS320F28020 , TMS320F280200 , TMS320F28021 , TMS320F28022 , TMS320F28023 , TMS320F28026 , TMS320F28026F , TMS320F28027 , TMS320F28027F

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Signal Descriptions
      1. Table 4-1 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings – Automotive
    3. 5.3  ESD Ratings – Commercial
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Power Consumption Summary
      1. Table 5-1 TMS320F2802x/F280200 Current Consumption at 40-MHz SYSCLKOUT
      2. Table 5-2 TMS320F2802x Current Consumption at 50-MHz SYSCLKOUT
      3. Table 5-3 TMS320F2802x Current Consumption at 60-MHz SYSCLKOUT
      4. 5.5.1     Reducing Current Consumption
      5. 5.5.2     Current Consumption Graphs (VREG Enabled)
    6. 5.6  Electrical Characteristics
    7. 5.7  Thermal Resistance Characteristics
      1. 5.7.1 PT Package
      2. 5.7.2 DA Package
    8. 5.8  Thermal Design Considerations
    9. 5.9  JTAG Debug Probe Connection Without Signal Buffering for the MCU
    10. 5.10 Parameter Information
      1. 5.10.1 Timing Parameter Symbology
      2. 5.10.2 General Notes on Timing Parameters
    11. 5.11 Test Load Circuit
    12. 5.12 Power Sequencing
      1. Table 5-5 Reset (XRS) Timing Requirements
      2. Table 5-6 Reset (XRS) Switching Characteristics
    13. 5.13 Clock Specifications
      1. 5.13.1 Device Clock Table
        1. Table 5-7  2802x Clock Table and Nomenclature (40-MHz Devices)
        2. Table 5-8  2802x Clock Table and Nomenclature (50-MHz Devices)
        3. Table 5-9  2802x Clock Table and Nomenclature (60-MHz Devices)
        4. Table 5-10 Device Clocking Requirements/Characteristics
        5. Table 5-11 Internal Zero-Pin Oscillator (INTOSC1/INTOSC2) Characteristics
      2. 5.13.2 Clock Requirements and Characteristics
        1. Table 5-12 XCLKIN Timing Requirements – PLL Enabled
        2. Table 5-13 XCLKIN Timing Requirements – PLL Disabled
        3. Table 5-14 XCLKOUT Switching Characteristics (PLL Bypassed or Enabled)
    14. 5.14 Flash Timing
      1. Table 5-15 Flash/OTP Endurance for T Temperature Material
      2. Table 5-16 Flash/OTP Endurance for S Temperature Material
      3. Table 5-17 Flash/OTP Endurance for Q Temperature Material
      4. Table 5-18 Flash Parameters at 60-MHz SYSCLKOUT
      5. Table 5-19 Flash Parameters at 50-MHz SYSCLKOUT
      6. Table 5-20 Flash Parameters at 40-MHz SYSCLKOUT
      7. Table 5-21 Flash Program/Erase Time
      8. Table 5-22 Flash/OTP Access Timing
      9. Table 5-23 Flash Data Retention Duration
  6. 6Detailed Description
    1. 6.1 Overview
      1. 6.1.1  CPU
      2. 6.1.2  Memory Bus (Harvard Bus Architecture)
      3. 6.1.3  Peripheral Bus
      4. 6.1.4  Real-Time JTAG and Analysis
      5. 6.1.5  Flash
      6. 6.1.6  M0, M1 SARAMs
      7. 6.1.7  L0 SARAM
      8. 6.1.8  Boot ROM
        1. 6.1.8.1 Emulation Boot
        2. 6.1.8.2 GetMode
        3. 6.1.8.3 Peripheral Pins Used by the Bootloader
      9. 6.1.9  Security
      10. 6.1.10 Peripheral Interrupt Expansion (PIE) Block
      11. 6.1.11 External Interrupts (XINT1–XINT3)
      12. 6.1.12 Internal Zero Pin Oscillators, Oscillator, and PLL
      13. 6.1.13 Watchdog
      14. 6.1.14 Peripheral Clocking
      15. 6.1.15 Low-power Modes
      16. 6.1.16 Peripheral Frames 0, 1, 2 (PFn)
      17. 6.1.17 General-Purpose Input/Output (GPIO) Multiplexer
      18. 6.1.18 32-Bit CPU-Timers (0, 1, 2)
      19. 6.1.19 Control Peripherals
      20. 6.1.20 Serial Port Peripherals
    2. 6.2 Memory Maps
    3. 6.3 Register Maps
    4. 6.4 Device Emulation Registers
    5. 6.5 VREG/BOR/POR
      1. 6.5.1 On-chip Voltage Regulator (VREG)
        1. 6.5.1.1 Using the On-chip VREG
        2. 6.5.1.2 Disabling the On-chip VREG
      2. 6.5.2 On-chip Power-On Reset (POR) and Brown-Out Reset (BOR) Circuit
    6. 6.6 System Control
      1. 6.6.1 Internal Zero Pin Oscillators
      2. 6.6.2 Crystal Oscillator Option
      3. 6.6.3 PLL-Based Clock Module
      4. 6.6.4 Loss of Input Clock (NMI Watchdog Function)
      5. 6.6.5 CPU Watchdog Module
    7. 6.7 Low-power Modes Block
    8. 6.8 Interrupts
      1. 6.8.1 External Interrupts
        1. 6.8.1.1 External Interrupt Electrical Data/Timing
          1. Table 6-21 External Interrupt Timing Requirements
          2. Table 6-22 External Interrupt Switching Characteristics
    9. 6.9 Peripherals
      1. 6.9.1  Analog Block
        1. 6.9.1.1 Analog-to-Digital Converter (ADC)
          1. 6.9.1.1.1 Features
          2. 6.9.1.1.2 ADC Start-of-Conversion Electrical Data/Timing
            1. Table 6-25 External ADC Start-of-Conversion Switching Characteristics
          3. 6.9.1.1.3 On-Chip Analog-to-Digital Converter (ADC) Electrical Data/Timing
            1. Table 6-26  ADC Electrical Characteristics
            2. Table 6-27  ADC Power Modes
            3. 6.9.1.1.3.1 Internal Temperature Sensor
              1. Table 6-28 Temperature Sensor Coefficient
            4. 6.9.1.1.3.2 ADC Power-Up Control Bit Timing
              1. Table 6-29 ADC Power-Up Delays
            5. 6.9.1.1.3.3 ADC Sequential and Simultaneous Timings
        2. 6.9.1.2 ADC MUX
        3. 6.9.1.3 Comparator Block
          1. 6.9.1.3.1 On-Chip Comparator/DAC Electrical Data/Timing
            1. Table 6-31 Electrical Characteristics of the Comparator/DAC
      2. 6.9.2  Detailed Descriptions
      3. 6.9.3  Serial Peripheral Interface (SPI) Module
        1. 6.9.3.1 SPI Master Mode Electrical Data/Timing
          1. Table 6-33 SPI Master Mode External Timing (Clock Phase = 0)
          2. Table 6-34 SPI Master Mode External Timing (Clock Phase = 1)
        2. 6.9.3.2 SPI Slave Mode Electrical Data/Timing
          1. Table 6-35 SPI Slave Mode External Timing (Clock Phase = 0)
          2. Table 6-36 SPI Slave Mode External Timing (Clock Phase = 1)
      4. 6.9.4  Serial Communications Interface (SCI) Module
      5. 6.9.5  Inter-Integrated Circuit (I2C)
        1. 6.9.5.1 I2C Electrical Data/Timing
          1. Table 6-39 I2C Timing Requirements
          2. Table 6-40 I2C Switching Characteristics
      6. 6.9.6  Enhanced PWM Modules (ePWM1/2/3/4)
        1. 6.9.6.1 ePWM Electrical Data/Timing
          1. Table 6-42 ePWM Timing Requirements
          2. Table 6-43 ePWM Switching Characteristics
        2. 6.9.6.2 Trip-Zone Input Timing
          1. Table 6-44 Trip-Zone Input Timing Requirements
      7. 6.9.7  High-Resolution PWM (HRPWM)
        1. 6.9.7.1 HRPWM Electrical Data/Timing
          1. Table 6-45 High-Resolution PWM Characteristics at SYSCLKOUT = 50 MHz–60 MHz
      8. 6.9.8  Enhanced Capture Module (eCAP1)
        1. 6.9.8.1 eCAP Electrical Data/Timing
          1. Table 6-47 Enhanced Capture (eCAP) Timing Requirement
          2. Table 6-48 eCAP Switching Characteristics
      9. 6.9.9  JTAG Port
      10. 6.9.10 General-Purpose Input/Output (GPIO) MUX
        1. 6.9.10.1 GPIO Electrical Data/Timing
          1. 6.9.10.1.1 GPIO - Output Timing
            1. Table 6-54 General-Purpose Output Switching Characteristics
          2. 6.9.10.1.2 GPIO - Input Timing
            1. Table 6-55 General-Purpose Input Timing Requirements
          3. 6.9.10.1.3 Sampling Window Width for Input Signals
          4. 6.9.10.1.4 Low-Power Mode Wakeup Timing
            1. Table 6-56 IDLE Mode Timing Requirements
            2. Table 6-57 IDLE Mode Switching Characteristics
            3. Table 6-58 STANDBY Mode Timing Requirements
            4. Table 6-59 STANDBY Mode Switching Characteristics
            5. Table 6-60 HALT Mode Timing Requirements
            6. Table 6-61 HALT Mode Switching Characteristics
  7. 7Applications, Implementation, and Layout
    1. 7.1 TI Reference Design
  8. 8Device and Documentation Support
    1. 8.1 Device and Development Support Tool Nomenclature
    2. 8.2 Tools and Software
    3. 8.3 Documentation Support
    4. 8.4 Related Links
    5. 8.5 Support Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Detailed Descriptions

Integral Nonlinearity

Integral nonlinearity refers to the deviation of each individual code from a line drawn from zero to full scale. The point used as zero occurs one-half LSB before the first code transition. The full-scale point is defined as level one-half LSB beyond the last code transition. The deviation is measured from the center of each particular code to the true straight line between these two points.

Differential Nonlinearity

An ideal ADC exhibits code transitions that are exactly 1 LSB apart. DNL is the deviation from this ideal value. A differential nonlinearity error of less than ±1 LSB ensures no missing codes.

Zero Offset

The major carry transition should occur when the analog input is at zero volts. Zero error is defined as the deviation of the actual transition from that point.

Gain Error

The first code transition should occur at an analog value one-half LSB above negative full scale. The last transition should occur at an analog value one and one-half LSB below the nominal full scale. Gain error is the deviation of the actual difference between first and last code transitions and the ideal difference between first and last code transitions.

Signal-to-Noise Ratio + Distortion (SINAD)

SINAD is the ratio of the rms value of the measured input signal to the rms sum of all other spectral components below the Nyquist frequency, including harmonics but excluding dc. The value for SINAD is expressed in decibels.

Effective Number of Bits (ENOB)

For a sine wave, SINAD can be expressed in terms of the number of bits. Using the following formula, TMS320F28027 TMS320F28027F TMS320F28026 TMS320F28026F TMS320F28023 TMS320F28022 TMS320F28021 TMS320F28020 TMS320F280200 q_sinad_prs584.gif it is possible to get a measure of performance expressed as N, the effective number of bits. Thus, effective number of bits for a device for sine wave inputs at a given input frequency can be calculated directly from its measured SINAD.

Total Harmonic Distortion (THD)

THD is the ratio of the rms sum of the first nine harmonic components to the rms value of the measured input signal and is expressed as a percentage or in decibels.

Spurious Free Dynamic Range (SFDR)

SFDR is the difference in dB between the rms amplitude of the input signal and the peak spurious signal.