SPRS797C November   2012  – October 2018 TMS320F28050 , TMS320F28051 , TMS320F28052 , TMS320F28053 , TMS320F28054 , TMS320F28055

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram
    2. 4.2 Signal Descriptions
      1. Table 4-1 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
      1. Table 5-1 TMS320F2805x Current Consumption at 60-MHz SYSCLKOUT
      2. 5.4.1     Reducing Current Consumption
      3. 5.4.2     Current Consumption Graphs (VREG Enabled)
    5. 5.5  Electrical Characteristics
    6. 5.6  Thermal Resistance Characteristics for PN Package
    7. 5.7  Thermal Design Considerations
    8. 5.8  Emulator Connection Without Signal Buffering for the MCU
    9. 5.9  Parameter Information
      1. 5.9.1 Timing Parameter Symbology
      2. 5.9.2 General Notes on Timing Parameters
    10. 5.10 Test Load Circuit
    11. 5.11 Power Sequencing
      1. Table 5-3 Reset (XRS) Timing Requirements
      2. Table 5-4 Reset (XRS) Switching Characteristics
    12. 5.12 Clock Specifications
      1. 5.12.1 Device Clock Table
        1. Table 5-5 2805x Clock Table and Nomenclature (60-MHz Devices)
        2. Table 5-6 Device Clocking Requirements/Characteristics
        3. Table 5-7 Internal Zero-Pin Oscillator (INTOSC1, INTOSC2) Characteristics
      2. 5.12.2 Clock Requirements and Characteristics
        1. Table 5-8  XCLKIN Timing Requirements - PLL Enabled
        2. Table 5-9  XCLKIN Timing Requirements - PLL Disabled
        3. Table 5-10 XCLKOUT Switching Characteristics (PLL Bypassed or Enabled)
    13. 5.13 Flash Timing
      1. Table 5-11 Flash/OTP Endurance for T Temperature Material
      2. Table 5-12 Flash/OTP Endurance for S Temperature Material
      3. Table 5-13 Flash/OTP Endurance for Q Temperature Material
      4. Table 5-14 Flash Parameters at 60-MHz SYSCLKOUT
      5. Table 5-15 Flash/OTP Access Timing
      6. Table 5-16 Flash Data Retention Duration
  6. 6Detailed Description
    1. 6.1 Overview
      1. 6.1.1  CPU
      2. 6.1.2  Control Law Accelerator
      3. 6.1.3  Memory Bus (Harvard Bus Architecture)
      4. 6.1.4  Peripheral Bus
      5. 6.1.5  Real-Time JTAG and Analysis
      6. 6.1.6  Flash
      7. 6.1.7  M0, M1 SARAMs
      8. 6.1.8  L0 SARAM, and L1, L2, and L3 DPSARAMs
      9. 6.1.9  Boot ROM
        1. 6.1.9.1 Emulation Boot
        2. 6.1.9.2 GetMode
        3. 6.1.9.3 Peripheral Pins Used by the Bootloader
      10. 6.1.10 Security
      11. 6.1.11 Peripheral Interrupt Expansion Block
      12. 6.1.12 External Interrupts (XINT1 to XINT3)
      13. 6.1.13 Internal Zero-Pin Oscillators, Oscillator, and PLL
      14. 6.1.14 Watchdog
      15. 6.1.15 Peripheral Clocking
      16. 6.1.16 Low-power Modes
      17. 6.1.17 Peripheral Frames 0, 1, 2, 3 (PFn)
      18. 6.1.18 General-Purpose Input/Output Multiplexer
      19. 6.1.19 32-Bit CPU-Timers (0, 1, 2)
      20. 6.1.20 Control Peripherals
      21. 6.1.21 Serial Port Peripherals
    2. 6.2 Memory Maps
    3. 6.3 Register Map
    4. 6.4 Device Emulation Registers
    5. 6.5 VREG, BOR, POR
      1. 6.5.1 On-chip VREG
        1. 6.5.1.1 Using the On-chip VREG
        2. 6.5.1.2 Disabling the On-chip VREG
      2. 6.5.2 On-chip Power-On Reset and Brownout Reset Circuit
    6. 6.6 System Control
      1. 6.6.1 Internal Zero-Pin Oscillators
      2. 6.6.2 Crystal Oscillator Option
      3. 6.6.3 PLL-Based Clock Module
      4. 6.6.4 Loss of Input Clock (NMI-watchdog Function)
      5. 6.6.5 CPU-watchdog Module
    7. 6.7 Low-power Modes Block
    8. 6.8 Interrupts
      1. 6.8.1 External Interrupts
        1. 6.8.1.1 External Interrupt Electrical Data/Timing
          1. Table 6-26 External Interrupt Timing Requirements
          2. Table 6-27 External Interrupt Switching Characteristics
    9. 6.9 Peripherals
      1. 6.9.1  Control Law Accelerator
        1. 6.9.1.1 CLA Device-Specific Information
        2. 6.9.1.2 CLA Register Descriptions
      2. 6.9.2  Analog Block
        1. 6.9.2.1 Analog-to-Digital Converter
          1. 6.9.2.1.1 ADC Device-Specific Information
          2. 6.9.2.1.2 ADC Electrical Data/Timing
            1. Table 6-32  ADC Electrical Characteristics
            2. Table 6-34  ADC Power Modes
            3. 6.9.2.1.2.1 External ADC Start-of-Conversion Electrical Data/Timing
              1. Table 6-35 External ADC Start-of-Conversion Switching Characteristics
            4. 6.9.2.1.2.2 Internal Temperature Sensor
              1. Table 6-36 Temperature Sensor Coefficient
            5. 6.9.2.1.2.3 ADC Power-Up Control Bit Timing
              1. Table 6-37 ADC Power-Up Delays
            6. 6.9.2.1.2.4 ADC Sequential and Simultaneous Timings
        2. 6.9.2.2 Analog Front End
          1. 6.9.2.2.1 AFE Device-Specific Information
          2. 6.9.2.2.2 AFE Register Descriptions
          3. 6.9.2.2.3 PGA Electrical Data/Timing
          4. 6.9.2.2.4 Comparator Block Electrical Data/Timing
            1. Table 6-45 Electrical Characteristics of the Comparator/DAC
          5. 6.9.2.2.5 VREFOUT Buffered DAC Electrical Data
            1. Table 6-46 Electrical Characteristics of VREFOUT Buffered DAC
      3. 6.9.3  Detailed Descriptions
      4. 6.9.4  Serial Peripheral Interface
        1. 6.9.4.1 SPI Device-Specific Information
        2. 6.9.4.2 SPI Register Descriptions
        3. 6.9.4.3 SPI Master Mode Electrical Data/Timing
          1. Table 6-48 SPI Master Mode External Timing (Clock Phase = 0)
          2. Table 6-49 SPI Master Mode External Timing (Clock Phase = 1)
        4. 6.9.4.4 SPI Slave Mode Electrical Data/Timing
          1. Table 6-50 SPI Slave Mode External Timing (Clock Phase = 0)
          2. Table 6-51 SPI Slave Mode External Timing (Clock Phase = 1)
      5. 6.9.5  Serial Communications Interface
        1. 6.9.5.1 SCI Device-Specific Information
        2. 6.9.5.2 SCI Register Descriptions
      6. 6.9.6  Enhanced Controller Area Network
        1. 6.9.6.1 eCAN Device-Specific Information
        2. 6.9.6.2 eCAN Register Descriptions
      7. 6.9.7  Inter-Integrated Circuit
        1. 6.9.7.1 I2C Device-Specific Information
        2. 6.9.7.2 I2C Register Descriptions
        3. 6.9.7.3 I2C Electrical Data/Timing
          1. Table 6-58 I2C Timing Requirements
          2. Table 6-59 I2C Switching Characteristics
      8. 6.9.8  Enhanced Pulse Width Modulator
        1. 6.9.8.1 ePWM Device-Specific Information
        2. 6.9.8.2 ePWM Register Descriptions
        3. 6.9.8.3 ePWM Electrical Data/Timing
          1. Table 6-62 ePWM Timing Requirements
          2. Table 6-63 ePWM Switching Characteristics
          3. 6.9.8.3.1  Trip-Zone Input Timing
            1. Table 6-64 Trip-Zone Input Timing Requirements
      9. 6.9.9  Enhanced Capture Module
        1. 6.9.9.1 eCAP Module Device-Specific Information
        2. 6.9.9.2 eCAP Module Register Descriptions
        3. 6.9.9.3 eCAP Module Electrical Data/Timing
          1. Table 6-66 eCAP Timing Requirement
          2. Table 6-67 eCAP Switching Characteristics
      10. 6.9.10 Enhanced Quadrature Encoder Pulse
        1. 6.9.10.1 eQEP Device-Specific Information
        2. 6.9.10.2 eQEP Register Descriptions
        3. 6.9.10.3 eQEP Electrical Data/Timing
          1. Table 6-69 eQEP Timing Requirements
          2. Table 6-70 eQEP Switching Characteristics
      11. 6.9.11 JTAG Port
        1. 6.9.11.1 JTAG Port Device-Specific Information
      12. 6.9.12 General-Purpose Input/Output
        1. 6.9.12.1 GPIO Device-Specific Information
        2. 6.9.12.2 GPIO Register Descriptions
        3. 6.9.12.3 GPIO Electrical Data/Timing
          1. 6.9.12.3.1 GPIO - Output Timing
            1. Table 6-74 General-Purpose Output Switching Characteristics
          2. 6.9.12.3.2 GPIO - Input Timing
            1. Table 6-75 General-Purpose Input Timing Requirements
          3. 6.9.12.3.3 Sampling Window Width for Input Signals
          4. 6.9.12.3.4 Low-Power Mode Wakeup Timing
            1. Table 6-76 IDLE Mode Timing Requirements
            2. Table 6-77 IDLE Mode Switching Characteristics
            3. Table 6-78 STANDBY Mode Timing Requirements
            4. Table 6-79 STANDBY Mode Switching Characteristics
            5. Table 6-80 HALT Mode Timing Requirements
            6. Table 6-81 HALT Mode Switching Characteristics
  7. 7Applications, Implementation, and Layout
    1. 7.1 TI Design or Reference Design
  8. 8Device and Documentation Support
    1. 8.1 Getting Started
    2. 8.2 Device and Development Support Tool Nomenclature
    3. 8.3 Tools and Software
    4. 8.4 Documentation Support
    5. 8.5 Related Links
    6. 8.6 Community Resources
    7. 8.7 Trademarks
    8. 8.8 Electrostatic Discharge Caution
    9. 8.9 Glossary
  9. 9Mechanical Packaging and Orderable Information
    1. 9.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Table 5-14 Flash Parameters at 60-MHz SYSCLKOUT

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Program Time(3) 8K Sector 250 2000(2) ms
4K Sector 125 2000(2) ms
16-Bit Word 50 μs
Erase Time(1) 8K Sector 2 12(2) s
4K Sector 2 12(2) s
IDDP(4) VDD current consumption during Erase/Program cycle VREG disabled 80 mA
IDDIOP(4) VDDIO current consumption during Erase/Program cycle 60
IDDIOP(4) VDDIO current consumption during Erase/Program cycle VREG enabled 120 mA
The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations.
Maximum flash parameter mentioned are for the first 100 program and erase cycles.
Program time is at the maximum device frequency. The programming time indicated in this table is applicable only when all the required code/data is available in the device RAM, ready for programming. Program time includes overhead of the flash state machine but does not include the time to transfer the following into RAM:
  • the code that uses flash API to program the flash
  • the Flash API itself
  • Flash data to be programmed
Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash programming could be higher than normal operating conditions. The power supply used should ensure VMIN on the supply rails at all times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed during the programming process.