SCDS412A June   2019  – August 2019 TMUX1133 , TMUX1134

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      TMUX113x Block Diagrams
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions TMUX1133
    2.     Pin Functions TMUX1134
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics (VDD = 5 V ±10 %)
    6. 7.6  Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 7.7  Electrical Characteristics (VDD = 2.5 V ±10 %), (VSS = –2.5 V ±10 %)
    8. 7.8  Electrical Characteristics (VDD = 1.8 V ±10 %)
    9. 7.9  Electrical Characteristics (VDD = 1.2 V ±10 %)
    10. 7.10 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  Transition Time
    5. 8.5  Break-Before-Make
    6. 8.6  tON(EN) and tOFF(EN)
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Crosstalk
    10. 8.10 Bandwidth
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail to Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Fail-Safe Logic
      5. 9.3.5 Ultra-low Leakage Current
      6. 9.3.6 Ultra-low Charge Injection
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
    3. 10.3 Design Requirements
    4. 10.4 Detailed Design Procedure
    5. 10.5 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Layout Information
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics (VDD = 2.5 V ±10 %), (VSS = –2.5 V ±10 %)

at TA = 25°C, VDD = +2.5 V, VSS = –2.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = VSS to VDD
ISD = 10 mA
Refer to On-Resistance
25°C 2 4 Ω
–40°C to +85°C   4.5 Ω
–40°C to +125°C   4.9 Ω
ΔRON On-resistance matching between channels VS = VSS to VDD
ISD = 10 mA
Refer to On-Resistance
25°C 0.18 Ω
–40°C to +85°C 0.4 Ω
–40°C to +125°C 0.5 Ω
RON FLAT On-resistance flatness VS = VSS to VDD
ISD = 10 mA
Refer to On-Resistance
25°C 0.85 Ω
–40°C to +85°C 1.6 Ω
–40°C to +125°C 1.6 Ω
IS(OFF) Source off leakage current(1) VDD = +2.5 V, VSS = –2.5 V
Switch Off
VD = +2 V / –1 V
VS = –1 V / +2 V
Refer to Off-Leakage Current
25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = +2.5 V, VSS = –2.5 V
Switch Off
VD = +2 V / –1 V
VS = –1 V / +2 V
Refer to Off-Leakage Current
25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
ID(ON)
IS(ON)
Channel on leakage current VDD = +2.5 V, VSS = –2.5 V
Switch On
VD = VS = +2 V / –1 V
Refer to On-Leakage Current
25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.35 0.35 nA
–40°C to +125°C –2 2 nA
LOGIC INPUTS (EN, SELx)
VIH Input logic high –40°C to +125°C 1.2 2.75 V
VIL Input logic low 0 0.73 V
IIH
IIL
Input leakage current 25°C   ±0.005   µA
IIH
IIL
Input leakage current –40°C to +125°C     ±0.05 µA
CIN Logic input capacitance 25°C   1 pF
–40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0 V or 2.75 V 25°C 0.008   µA
–40°C to +125°C   1 µA
ISS VSS supply current Logic inputs = 0 V or 2.75 V 25°C 0.008   µA
–40°C to +125°C   1 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 1.5 V
RL = 200 Ω, CL = 15 pF
Refer to Transition Time
25°C   12   ns
–40°C to +85°C     20 ns
–40°C to +125°C     21 ns
tOPEN (BBM) Break before make time VS = 1.5 V
RL = 200 Ω, CL = 15 pF
Refer to Break-Before-Make
25°C   8   ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
tON(EN) Enable turn-on time
(TMUX1133 Only)
VS = 1.5 V
RL = 200 Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN)
25°C   12   ns
–40°C to +85°C     21 ns
–40°C to +125°C     22 ns
tOFF(EN) Enable turn-off time
(TMUX1133 Only)
VS = 1.5 V
RL = 200 Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN)
25°C   6   ns
–40°C to +85°C   14 ns
–40°C to +125°C   15 ns
QC Charge Injection VS = –1 V
RS = 0 Ω, CL = 1 nF
Refer to Charge Injection
25°C –1 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Off Isolation
25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Off Isolation
25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Crosstalk
25°C   –100   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Crosstalk
25°C   –90   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF
Refer to Bandwidth
25°C   220   MHz
CSOFF Source off capacitance f = 1 MHz 25°C   6   pF
CDOFF Drain off capacitance f = 1 MHz 25°C   17   pF
CSON
CDON
On capacitance f = 1 MHz 25°C   20   pF
When VS is positive, VD is negative or when VS is negative, VD is positive.