SCDS384B September 2018 – August 2025 TMUX6119
PRODUCTION DATA
The TMUX6119 is implemented with simple transmission gate topology, as shown in Figure 7-15. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.
Figure 7-15 Transmission Gate TopologyThe TMUX6119 utilizes special charge-injection cancellation circuitry that reduces the source (SA or SB)-to-drain (D) charge injection to as low as 0.19pC at VS = 0V, as shown in Figure 7-16.
Figure 7-16 Charge Injection vs Source VoltageThe drain (D)-to-source (SA or SB) charge injection becomes important when the device is used as a demultiplexer (demux), where D becomes the input and Sx becomes the output. Figure 7-17 shows the drain-to-source charge injection across the full signal range.
Figure 7-17 Charge Injection vs Drain Voltage