SCDS417B March   2022  – December 2023 TMUX7236

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  ±20 V Dual Supply: Electrical Characteristics
    9. 5.9  ±20 V Dual Supply: Switching Characteristics
    10. 5.10 44 V Single Supply: Electrical Characteristics 
    11. 5.11 44 V Single Supply: Switching Characteristics 
    12. 5.12 12 V Single Supply: Electrical Characteristics 
    13. 5.13 12 V Single Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  tON(EN) and tOFF(EN)
    6. 6.6  Break-Before-Make
    7. 6.7  tON (VDD) Time
    8. 6.8  Propagation Delay
    9. 6.9  Charge Injection
    10. 6.10 Off Isolation
    11. 6.11 Crosstalk
    12. 6.12 Bandwidth
    13. 6.13 THD + Noise
    14. 6.14 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Feature Description
      1. 7.2.1 Bidirectional Operation
      2. 7.2.2 Rail to Rail Operation
      3. 7.2.3 1.8 V Logic Compatible Inputs
      4. 7.2.4 Integrated Pull-Down Resistor on Logic Pins
      5. 7.2.5 Fail-Safe Logic
      6. 7.2.6 Latch-Up Immune
      7. 7.2.7 Ultra-Low Charge Injection
    3. 7.3 Device Functional Modes
    4. 7.4 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
        1. 8.2.3.1 On-Resistance Mismatch Between Channels
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Glossary
    6. 9.6 Electrostatic Discharge Caution
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RUM|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.9 Charge Injection

The TMUX7236 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 6-9 shows the setup used to measure charge injection from source (Sx) to drain (D).

GUID-20220215-SS0I-4B9Q-BW1R-BPLRWJNVTM2B-low.svg Figure 6-9 Charge-Injection Measurement Setup