SLLSEG0F March   2013  – September 2017 TPD4E001-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 AEC-Q100 Qualified
      2. 7.3.2 IEC 61000-4-2 Level 4 ESD Protection
      3. 7.3.3 IEC 61000-4-5 Surge Protection
      4. 7.3.4 Low 1.5-pF Input Capacitance
      5. 7.3.5 Low 10-nA (Maximum) Leakage Current
      6. 7.3.6 0.9-V to 5.5-V Supply Voltage Range
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on IO1 Through IO4
        2. 8.2.2.2 Voltage Range on VCC
        3. 8.2.2.3 Bandwidth on IO1 Through IO4
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage –0.3 7 V
VIO I/O voltage tolerance –0.3 VCC + 0.3 V
IPP Peak pulse current (Tp = 8/20 µs)(2) 5.5 A
PPP Peak pulse power (Tp = 8/20 µs)(2) 100 W
TA Free air operating temperature –40 125 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) SStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.

6.2 ESD Ratings—AEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±15000 V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 ESD Ratings—IEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±8000 V
IEC 61000-4-2 air-gap discharge ±15000

6.4 ESD Ratings—ISO Specification

VALUE UNIT
V(ESD) Electrostatic discharge ISO 10605 (330 pF, 330 Ω) contact discharge ±8000 V
ISO 10605 (330 pF, 330 Ω) air-gap discharge ±15000

6.5 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
TA Free air operating temperature –40 125 °C
VCC pin Operating voltage 0.9 5.5 V
IO1, IO2, IO3, IO4 pins Operating voltage 0 VCC V

6.6 Thermal Information

THERMAL METRIC(1) TPD4E001-Q1 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 202.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 146.2 °C/W
RθJB Junction-to-board thermal resistance 47.1 °C/W
ψJT Junction-to-top characterization parameter 37.6 °C/W
ψJB Junction-to-board characterization parameter 46.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.7 Electrical Characteristics

VCC = 5 V ± 10%, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
ICC Supply current 1 200 nA
VF Diode forward voltage IF = 10 mA 0.65 0.95 V
VBR Breakdown voltage IBR = 10 mA 11 V
VCLAMP Clamping voltage Surge strike(2) on IO pin, GND pin grounded, VCC = 5.5 V, IPP = 5.5 A Positive transients 16 V
VRWM Reverse standoff voltage IO pin to GND pin 5.5 V
IIO Channel leakage current VIO = GND to VCC ±10 nA
CIO Channel input capacitance VCC = 5 V, bias of VCC/2, f = 10 MHz 1.5 pF
(1) Typical values are at VCC = 5 V and TA = 25°C.

6.8 Typical Characteristics

TPD4E001-Q1 iocap_iovolt_lls682.gif Figure 1. IO Capacitance vs IO Voltage (VCC = 5 V)
TPD4E001-Q1 peak_pulse_SLLSEG0.gif Figure 3. Peak Pulse Waveform, VCC = 5.5 V
TPD4E001-Q1 C001_SLLSEG0.png Figure 2. IO Leakage Current vs Temperature