SLVSGK4A November   2021  – June 2022 TPS22953-Q1 , TPS22954-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3.     Recommended Operating Conditions
    4. 7.3  Thermal Information
    5. 7.4  Electrical Characteristics
    6. 7.5  Electrical Characteristics – VBIAS = 5 V
    7. 7.6  Electrical Characteristics – VBIAS = 3.3 V
    8. 7.7  Electrical Characteristics – VBIAS = 2.5 V
    9. 7.8  Switching Characteristics – CT = 1000 pF
    10. 7.9  Switching Characteristics – CT = 0 pF
    11. 7.10 Typical DC Characteristics
    12. 7.11 Typical Switching Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  On and Off Control (EN Pin)
      2. 9.3.2  Voltage Monitoring (SNS Pin)
      3. 9.3.3  Power Good (PG Pin)
      4. 9.3.4  Supervisor Fault Detection and Automatic Restart
      5. 9.3.5  Manual Restart
      6. 9.3.6  Thermal Shutdown
      7. 9.3.7  Reverse Current Blocking (TPS22953-Q1 Only)
      8. 9.3.8  Quick Output Discharge (QOD) (TPS22954-Q1 Only)
      9. 9.3.9  VIN and VBIAS Voltage Range
      10. 9.3.10 Adjustable Rise Time (CT Pin)
      11. 9.3.11 Power Sequencing
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Input to Output Voltage Drop
      2. 10.1.2 Thermal Considerations
      3. 10.1.3 Automatic Power Sequencing
      4. 10.1.4 Monitoring a Downstream Voltage
      5. 10.1.5 Monitoring the Input Voltage
      6. 10.1.6 Break-Before-Make Power MUX (TPS22953-Q1 Only)
      7. 10.1.7 Make-Before-Break Power MUX (TPS22953-Q1 Only)
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.1 Layout Guidelines

  • Input and Output traces must be as short and wide as possible to accommodate for high current.
  • Use vias under the exposed thermal pad for thermal relief for high current operation.
  • The CT Capacitor must be placed as close as possible to the device to minimize parasitic trace capacitance. TI recommends to cutout copper on other layers directly below CT to minimize parasitic capacitance.
  • The IN terminal must be bypassed to ground with low ESR ceramic bypass capacitors. The typical recommended bypass capacitance is ceramic with X5R or X7R dielectric. This capacitor must be placed as close to the device pins as possible.
  • The OUT terminal must be bypassed to ground with low ESR ceramic bypass capacitors. The typical recommended bypass capacitance is ceramic with X5R or X7R dielectric. This capacitor must be placed as close to the device pins as possible.
  • The BIAS terminal must be bypassed to ground with low ESR ceramic bypass capacitors. The typical recommended bypass capacitance is ceramic with X5R or X7R dielectric.