SLVSAL1E March   2011  – April 2016 TPS24720

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 THERMAL INFORMATION
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Descriptions
        1. 7.3.1.1  EN
        2. 7.3.1.2  ENSD
        3. 7.3.1.3  FFLTb
        4. 7.3.1.4  FLTb
        5. 7.3.1.5  GATE
        6. 7.3.1.6  GND
        7. 7.3.1.7  IMON
        8. 7.3.1.8  LATCH
        9. 7.3.1.9  OUT
        10. 7.3.1.10 OV
        11. 7.3.1.11 PGb
        12. 7.3.1.12 PROG
        13. 7.3.1.13 SENSE
        14. 7.3.1.14 SET
        15. 7.3.1.15 TIMER
        16. 7.3.1.16 VCC
    4. 7.4 Device Functional Modes
      1. 7.4.1  Board Plug-In
      2. 7.4.2  Inrush Operation
      3. 7.4.3  Action of the Constant-Power Engine
      4. 7.4.4  Circuit Breaker and Fast Trip
      5. 7.4.5  Automatic Restart
      6. 7.4.6  PGb, FLTb, and Timer Operations
      7. 7.4.7  Overtemperature Shutdown
      8. 7.4.8  Start-Up of Hot-Swap Circuit by VCC or EN
      9. 7.4.9  Minimization of Power Dissipation at STANDY by ENSD
      10. 7.4.10 Fault Detection of MOSFET Short With FFLTb
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Power-Limited Start-Up
          1. 8.2.2.1.1 STEP 1. Choose RSENSE, RSET, and RIMON
          2. 8.2.2.1.2 STEP 2. Choose MOSFET M1
          3. 8.2.2.1.3 STEP 3. Choose Power-Limit Value, PLIM, and RPROG
          4. 8.2.2.1.4 STEP 4. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT
          5. 8.2.2.1.5 STEP 5. Calculate the Retry-Mode Duty Ratio
          6. 8.2.2.1.6 STEP 6. Select R1, R2, and R3 for UV and OV
          7. 8.2.2.1.7 STEP 7. Choose RGATE, R4, R5, R6, and C1
        2. 8.2.2.2 Additional Design Considerations
          1. 8.2.2.2.1 Use of PGb
          2. 8.2.2.2.2 Output Clamp Diode
          3. 8.2.2.2.3 Gate Clamp Diode
          4. 8.2.2.2.4 High-Gate-Capacitance Applications
          5. 8.2.2.2.5 Bypass Capacitors
          6. 8.2.2.2.6 Output Short-Circuit Measurements
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range, all voltages referred to GND (unless otherwise noted)
MIN MAX UNIT
Input voltage range EN, FFLTb(1), FLTb(1), GATE, OUT, PGb(1), SENSE, SET(1), VCC –0.3 30 V
ENSD, OV –0.3 20
PROG(1) –0.3 3.6
[SET, SENSE] to VCC –0.3 0.3
IMON, LATCH, TIMER –0.3 5
Sink current FFLTb, FLTb, PGb 5 mA
Source current PROG Internally limited
IMON 5 mA
Temperature Maximum junction, TJ Internally limited °C
(1) Do not apply voltage directly to these pins.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except PGb ±2000 V
PIN PGb ±500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 THERMAL INFORMATION

THERMAL METRIC(1) TPS24720 UNIT
QFN (16) PINS
RθJA Junction-to-ambient thermal resistance 47.3 °C/W
RθJCtop Junction-to-case (top) thermal resistance 63.8 °C/W
RθJB Junction-to-board thermal resistance 20.9 °C/W
ψJT Junction-to-top characterization parameter 1.6 °C/W
ψJB Junction-to-board characterization parameter 21 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 5.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range ENSD, OV 0 16 V
SENSE, SET(1), VCC 2.5 18
EN, FFLTb, FLTb, PGb, OUT 0 18
Sink current FFLTb, FLTb, PGb 0 2 mA
Source current IMON 0 1 mA
Resistance PROG 4.99 500 kΩ
External capacitance TIMER 1 nF
Operating junction temperature range, TJ –40 125 °C
(1) Do not apply voltage directly to these pins.

6.5 Electrical Characteristics

–40°C ≤ TJ ≤ 125°C, VCC = 12 V, VEN = 3 V, VENSD = 3 V, RSET = 190 Ω, RIMON = 5 kΩ, and RPROG = 50 kΩ to GND.
All voltages referenced to GND, unless otherwise noted.
PARAMETER CONDITIONS MIN NOM MAX UNIT
VCC
UVLO threshold, rising 2.2 2.32 2.45 V
UVLO threshold, falling 2.1 2.22 2.35 V
UVLO hysteresis(1) 0.1 V
Supply current Enabled ― IOUT + IVCC + ISENSE 1 1.4 mA
Disabled (1) ― EN = 0 V, IOUT + IVCC + ISENSE 0.45 mA
Shutdown ― ENSD = 0 V, IOUT + IVCC + ISENSE 1.7 10 µA
EN
Threshold voltage, falling 1.2 1.3 1.4 V
Hysteresis(1) 50 mV
Input leakage current 0 V ≤ VEN ≤ 30 V –1 0 1 µA
ENSD
Threshold voltage Rising or falling edge 0.3 0.7 1.4 V
Pullup current VENSD = 5 V 0.5 1.2 2 µA
OV
Threshold voltage, rising 1.25 1.35 1.45 V
Hysteresis(1) 60 mV
Input leakage current 0 V ≤ VOV ≤ 30 V –1 0 1 µA
Deglitch time OV rising 0.5 1.2 1.5 µs
FLTb
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current VFLTb = 0 V, 30 V –1 0 1 µA
PGb
Threshold V(SENSE – OUT) rising, PGb going high 140 240 340 mV
Hysteresis(1) Measured V(SENSE – OUT) falling, PGb going low 70 mV
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current VPGb = 0 V, 30 V –1 0 1 µA
FFLTb
VIMON threshold Measured VIMON to GND 90 103 115 mV
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current FFLTb = 0 V, 30 V –1 0 1 µA
PROG
Bias voltage Sourcing 10 µA 0.65 0.678 0.7 V
Input leakage current VPROG = 1.5 V –0.2 0 0.2 µA
TIMER
Sourcing current VTIMER = 0 V 8 10 12 µA
Sinking current VTIMER = 2 V 8 10 12 µA
VEN = 0 V, VTIMER = 2 V 2 4.5 7 mA
Upper threshold voltage 1.3 1.35 1.4 V
Lower threshold voltage 0.33 0.35 0.37 V
Timer activation voltage Raise GATE until ITIMER sinking, measure V(GATE – VCC), VVCC = 12 V 5 5.9 7 V
Bleed-down resistance VENSD = 0 V, VTIMER = 2 V 70 104 130 kΩ
IMON
Summing threshold Current limit in regulation 660 675 690 mV
OUT
Input bias current VOUT = 12 V 16 30 µA
SET
Input referred offset Measure SET to SENSE –1.5 0 1.5 mV
GATE
Output voltage VOUT = 12 V 23.5 25.8 28 V
Clamp voltage Inject 10 µA into GATE, measure V(GATE – VCC) 12 13.9 15.5 V
Sourcing current VGATE = 12 V 20 30 40 µA
Sinking current Fast turnoff, VGATE = 14 V 0.5 1 1.4 A
Sustained, VGATE = 4 V to 23 V 6 11 20 mA
In inrush current limit, VGATE = 4 V to 23 V 20 30 40 µA
Pulldown resistance Thermal shutdown or VENSD = 0 V 14 20 26 kΩ
SENSE
Input bias current VSENSE = 12 V, sinking current 30 40 µA
Current limit threshold VOUT = 12 V 22.5 25 27.5 mV
Power limit threshold VOUT = 7 V, RPROG = 50 kΩ 10 12.5 15 mV
VOUT = 2 V, RPROG = 25 kΩ 10 12.5 15
Fast-trip threshold 52 60 68 mV
LATCH
Threshold, rising 0.3 0.9 1.4 V
Pullup current VLATCH = 0 V 7 10 13 µA
OTSD
Threshold, rising 130 140 °C
Hysteresis(1) 10 °C
(1) Parameters are provided for reference only, and do not constitute part of TI’s published specifications for purposes of TI product warranty.

6.6 Timing Requirements

MIN NOM MAX UNIT
EN
Turnoff time EN ↓ to VGATE < 1 V, CGATE = 33 nF 20 60 150 µs
Deglitch time EN ↑ 8 14 18 µs
Disable delay EN ↓ to GATE ↓, CGATE = 0, tpff50–90, See Figure 1 0.1 0.4 1 µs
ENSD
Disable delay ENSD to GATE, tpff50–90, See Figure 1 0.75 1 µs
FFLTb
Delay FFLTb falling 60 115 140 ms
PG, PGb
Delay (deglitch) time Rising or falling edge 2 3.4 6 ms
GATE
Turn on delay VVCC rising to GATE sourcing, tprr50-50, See Figure 3 100 250 µs
SENSE
Fast-turnoff duration 8 13.5 18 µs
Fast-turnoff delay (1) V(VCC – SENSE) = 80 mV, CGATE = 0 pF, tprf50–50, See Figure 4 200 ns
TPS24720 T0492-01_LVSAL1.gif Figure 1. tpff50–90 Timing Definition
TPS24720 T0494-01_LVSAL1.gif Figure 3. tprr50–50 Timing Definition
TPS24720 T0493-01_LVSAL1.gif Figure 2. tpff50–90 Timing Definition
TPS24720 T0495-01_LVSAL1.gif Figure 4. tprf50–50 Timing Definition

6.7 Typical Characteristics

TPS24720 Figure_06_LVSAL1.gif
Figure 5. Supply Current vs Input Voltage at Normal Operation (EN = High)
TPS24720 Figure_08_LVSAL1.gif
Figure 7. Voltage Across RSENSE in Inrush Current Limiting vs Temperature
TPS24720 Figure_10_LVSAL1.gif
Figure 9. MOSFET Gate Current vs Voltage Across RSENSE During Inrush Power Limiting
TPS24720 Figure_12_LVSAL1.gif
Figure 11. Gate Current During Fast Trip,
VVCC = VGATE = 3.3 V
TPS24720 Figure_14_LVSAL1.gif
Figure 13. TIMER Activation Voltage Threshold
vs Input Voltage at Various Temperatures
TPS24720 Figure_16_LVSAL1.gif
Figure 15. EN and ENSD Threshold Voltage vs Temperature
TPS24720 Figure_18_LVSAL1.gif
Figure 17. Threshold Voltage of VDS vs Temperature,
PGb Rising and Falling
TPS24720 Figure_20_LVSAL1.gif
Figure 19. PGb Open-Drain Output Voltage in Low State
TPS24720 Figure_22_LVSAL1.gif
Figure 21. FFLTb Open-Drain Output Voltage in Low State
TPS24720 Figure_24_LVSAL1.gif
Figure 23. Timer Upper Threshold Voltage vs Temperature at Various Input Voltages
TPS24720 Figure_26_LVSAL1.gif
Figure 25. Timer Sourcing Current vs Temperature at Various Input Voltages
TPS24720 Figure_28_LVSAL1.gif
Figure 27. OV and LATCH Threshold Voltage vs Temperature
TPS24720 Figure_07_LVSAL1.gif
Figure 6. Supply Current vs Input Voltage at Shutdown
(EN = 0 V)
TPS24720 Figure_09_LVSAL1.gif
Figure 8. Voltage Across RSENSE in Inrush Power Limiting
vs VDS of Pass MOSFET
TPS24720 Figure_11_LVSAL1.gif
Figure 10. Gate Current During Fast Trip,
VVCC = VGATE = 12 V
TPS24720 Figure_13_LVSAL1.gif
Figure 12. Gate Voltage With Zero Gate Current
vs Input Voltage
TPS24720 Figure_15_LVSAL1.gif
Figure 14. Fault-Timer vs Temperature With Various
TIMER Capacitors
TPS24720 Figure_17_LVSAL1.gif
Figure 16. UVLO Threshold Voltage vs Temperature
TPS24720 Figure_19_LVSAL1.gif
Figure 18. Fast-Trip Threshold Voltage vs Temperature
TPS24720 Figure_21_LVSAL1.gif
Figure 20. FLTb Open-Drain Output Voltage in Low State
TPS24720 Figure_23_LVSAL1.gif
Figure 22. Supply Current vs Input Voltage at Various Temperatures When EN Pulled Low
TPS24720 Figure_25_LVSAL1.gif
Figure 24. Timer Lower Threshold Voltage vs Temperature at Various Input Voltages
TPS24720 Figure_27_LVSAL1.gif
Figure 26. Timer Sinking Current vs Temperature at Various Input Voltages