SLVSGA8B May   2021  – April 2022 TPS25946

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.3.2 Active Current Limiting
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Load Current Monitor
      5. 8.3.5 Reverse Current Protection
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power Good Indication (PG)
      9. 8.3.9 Input Supply Good Indication (SPLYGD)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Overvoltage Threshold
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
        7. 9.2.2.7 Selecting External Bias Resistor (R5)
        8. 9.2.2.8 Selecting External Diode (D1)
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.3 Setting Output Voltage Rise Time (tR)

For a successful design, the junction temperature of device must be kept below the absolute maximum rating during both dynamic (start-up) and steady-state conditions. Dynamic power stresses often are an order of magnitude greater than the static stresses, so it is important to determine the right start-up time and inrush current limit required with system capacitance to avoid thermal shutdown during start-up.

The slew rate (SR) needed to achieve the desired output rise time can be calculated as:

Equation 9. GUID-20210428-CA0I-CXL0-LSKP-G5NXLPWPL7CL-low.gif

The CdVdt needed to achieve this slew rate can be calculated as:

Equation 10. GUID-20210428-CA0I-S0BT-SZ65-D8VFPWFDQMNW-low.gif

Choose the nearest standard capacitor value as 1100 pF.

For this slew rate, the inrush current can be calculated as:

Equation 11. GUID-20210428-CA0I-Q27L-DL6M-RC5WSGJP6ND2-low.gif

The average power dissipation inside the part during inrush can be calculated as:

Equation 12. GUID-20210428-CA0I-8ZBL-TNLW-VCS3BBNNXQQT-low.gif
For the given power dissipation, the thermal shutdown time of the device must be greater than the ramp-up time tR to avoid start-up failure. Figure 9-4 shows the thermal shutdown limit, for 0.38 W of power, the shutdown time is over 100 ms which is very large as compared to tR = 5 ms. Therefore, it is safe to use 5 ms as the start-up time for this application.
Figure 9-4 Thermal Shutdown Plot During Inrush