SLVSFJ6 November   2020 TPS27SA08

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Summary Table
  6. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Undervoltage Lockout (UVLO)
          3. 9.3.1.2.3 VBB during Short-to-Ground
        3. 9.3.1.3 Energy Limit
        4. 9.3.1.4 Voltage Transients
          1. 9.3.1.4.1 Driving Inductive and Capacitive Loads
        5. 9.3.1.5 Reverse supply
        6. 9.3.1.6 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-supply and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 ST Pin
        4. 9.3.2.4 Fault Indication and SNS Mux
        5. 9.3.2.5 Resistor Sharing
        6. 9.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Related Documentation
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

VBB = 8 V to 36 V, TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VClamp VDS clamp voltage 40 58 V
VUVLOF VBB undervoltage lockout falling 2.5 3 V
VUVLOR VBB undervoltage lockout rising 2.5 3 V
ISB Standby current (includes MOSFET leakage) VBB = 24 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 0.8 µA
VBB = 24 V, TJ = 85°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 1 µA
VBB = 24 V, TJ = 125°C,
VEN = VDIA_EN = 0 V, VOUT = 0 V		 6 µA
IOUT_OFF Output leakage current VBB = 24 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 0.01 0.5 µA
VBB = 24 V, TJ = 125°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 6 µA
IDIA Current consumption in diagnostic mode VBB = 24 V, ISNS = 0 mA
VEN = 0 V, VDIA_EN = 5 V, VOUT = 0 V		 3 6 mA
IQ Quiescent current VBB = 24 V
VEN = 5 V VDIA_EN = 0 V, IOUT = 0 A, VSELX = 0 V		 2.4 5.2 mA
tSTBY Standby mode delay time VEN = VDIA_EN = 0 V to Standby 20 ms
RON CHARACTERISTICS
RON On-resistance
Includes MOSFET and package		 TJ = 25°C, 6 V ≤ VBB ≤ 36 V 9 mΩ
TJ = 150°C, 6 V ≤ VBB ≤ 36 V 20 mΩ
TJ = 25°C, 3 V ≤ VBB ≤ 6 V 15 mΩ
RON(REV) On-resistance during reverse polarity TJ = 25°C, -18 V ≤ VBB ≤ –8 V 9 mΩ
TJ = 105°C, –18 V ≤ VBB ≤ –8 V 20 mΩ
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUT / ISNS 		4600
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 8 A 1.74 mA
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 8 A –5 5 %
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 3 A 0.65 mA
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 3 A –5 5 %
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 780 mA 0.217 mA
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 780 mA –5 5 %
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 300 mA 0.065 mA
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 300 mA –12 12 %
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 100 mA 0.022 mA
ISNSI Current sense current and current sense accuracy VEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 V IOUT = 100 mA –42 42 %
TJ SENSE CHARACTERISTICS
ISNST Temperature sense current VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V TJ = –40°C 0.12 mA
TJ = 25°C 0.85 mA
TJ = 85°C 1.52 mA
TJ = 150°C 2.25 mA
dISNST/dT Coefficient 0.0112 mA/°C
VBB SENSE CHARACTERISTICS
ISNSV Voltage sense current VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 5 V VBB = 3 V 0.26 mA
VBB = 8 V 0.69 mA
VBB = 13.5 V 1.17 mA
VBB = 18 V 1.56 mA
VBB = 28 V 2.43 mA
dISNSV/dV Coefficient 0.0867 mA/V
SNS CHARACTERISTICS
ISNSFH ISNS fault high level VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = 0 6 6.9 7.6 mA
ISNSleak ISNS leakage VDIA_EN = 0 V 0 1 µA
VSNSclamp VSNS clamp 5.9 V
ICL Current threshold at which current limit loop engages TJ = –40°C 17 22.2 27.8 A
ICL Current threshold at which current limit loop engages TJ = 25°C 15 20 25 A
ICL_REG Current limit regulation level TJ = 25°C 24 A
ICL Current threshold at which current limit loop engages TJ = 125°C 12.8 16 20 A
CURRENT LIMIT CHARACTERISTICS
FAULT CHARACTERISTICS
VOL Open-load detection voltage VEN = 0 V, VDIA_EN = 5 V 2 2.5 4 V
tOL1 OL and STB indication time - switch disabled From falling edge of EN
VEN= 5 V to 0 V, VDIA_EN = 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 4 V		 300 500 700 µs
tOL2 OL and STB indication time - switch disabled From rising edge of DIA_EN
VEN = 0 V, VDIA_EN = 0 V to 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 4 V		 50 µs
tOL3 OL and STB indication time - switch disabled From rising edge of VOUT
VEN = 0 V, VDIA_EN = 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 0 V to 4 V		 50 µs
TABS Thermal shutdown 160 °C
THYS Thermal shutdown hysteresis 20 °C
tRETRY Retry time Minimum time from fault shutdown to switch re-enable (for thermal shutdown, current limit, and energy limit) 1 2 3 ms
EN PIN CHARACTERISTICS(1)
VIL, EN Input voltage low level 0.8 V
VIH, EN Input voltage high level No GND network Diode 2 V
VIHYS, EN Input voltage hysteresis No GND network Diode 250 mV
IIL, EN Input current low level VEN = 0.8 V 0.8 µA
IIH, EN Input current high level VEN = 2.0 V 2 µA
REN Internal pulldown resistor 1 MΩ
DIA_EN PIN CHARACTERISTICS (1)
VIL, DIA_EN Input voltage low level No GND network Diode 0.8 V
VIH, DIA_EN Input voltage high level No GND network Diode 2 V
VIHYS, DIA_EN Input voltage hysteresis 250 mV
IIL, DIA_EN Input current low level VDIA_EN = 0.8 V 0.8 µA
IIH, DIA_EN Input current high level VDIA_EN = 2.0 V 2 µA
RDIA_EN Internal pulldown resistor 1 MΩ
SEL1 AND SEL2 PIN CHARACTERISTICS (1)
VIL, SELx Input voltage low level No GND network Diode 0.8 V
VIH, SELx Input voltage high level 2 V
VIHYS, SELx Input voltage hysteresis 250 mV
IIL, SELx Input current low level VSELx = 0.8 V 0.8 µA
IIH, SELx Input current high level VSELx = 2.0 V 2 µA
RSELx Internal pulldown resistor 1 MΩ
LATCH PIN CHARACTERISTICS (1)
VIL, LATCH Input voltage low level No GND network Diode 0.8 V
VIH, LATCH Input voltage high level No GND network Diode 2 V
VIHYS, LATCH Input voltage hysteresis 250 mV
IIL, LATCH Input current low level VLATCH = 0.8 V 0.8 µA
IIH, LATCH Input current high level VLATCH = 2.0 V 2 µA
RLATCH Internal pulldown resistor 1 MΩ
ST PIN CHARACTERISTICS (1)
VOL, ST Output voltage low level IST = 1 mA 0.4 V
ISTleak Leakage current VST = 5 V 2 µA
(1) VBB = 3 to 28 V