SBVS273A June   2016  – September 2016 TPS3779-Q1 , TPS3780-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Inputs (SENSE1, SENSE2)
      2. 8.3.2 Outputs (OUT1, OUT2)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD ≥ VDD(min))
      2. 8.4.2 Power-On-Reset (VDD < V(POR))
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Threshold Overdrive
      2. 9.1.2 Sense Resistor Divider
    2. 9.2 Typical Applications
      1. 9.2.1 Monitoring Two Separate Rails
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Early Warning Detection
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power-Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Evaluation Modules
        2. 12.1.1.2 Spice Models
      2. 12.1.2 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Related Links
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage VDD –0.3 7 V
OUT1, OUT2 (TPS3779-Q1 only) –0.3 VDD + 0.3
OUT1, OUT2 (TPS3780-Q1 only) –0.3 7
SENSE1, SENSE2 –0.3 7
Current OUT1, OUT2 ±20 mA
Temperature Operating junction, TJ(2) –40 125 °C
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For low-power devices, the junction temperature rise above the ambient temperature is negligible; therefore, the junction temperature is considered equal to the ambient temperature (TJ = TA).

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Power-supply voltage 1.5 5.5 V
Sense voltage SENSE1, SENSE2 0 5.5 V
Output voltage (TPS3779-Q1 only) OUT1, OUT2 0 VDD + 0.3 V
Output voltage (TPS3780-Q1 only) OUT1, OUT2 0 5.5 V
RPU Pullup resistor (TPS3780-Q1 only) 1.5 10,000 kΩ
Current OUT1, OUT2 –5 5 mA
CIN Input capacitor 0.1 µF
TJ Junction temperature –40 25 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS3779-Q1, TPS3780-Q1 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 193.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 134.5 °C/W
RθJB Junction-to-board thermal resistance 39.0 °C/W
ψJT Junction-to-top characterization parameter 30.4 °C/W
ψJB Junction-to-board characterization parameter 38.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

all specifications are over the operating temperature range of –40°C < TJ < +125°C and 1.5 V ≤ VDD ≤ 5.5 V (unless otherwise noted); typical values are at TJ = 25°C and VDD = 3.3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDD Input supply range 1.5 5.5 V
V(POR) Power-on-reset voltage(1) VOL (max) = 0.2 V, IOL = 15 µA 0.8 V
IDD Supply current (into VDD pin) VDD = 3.3 V, no load 2.09 5.80 µA
VDD = 5.5 V, no load 2.29 6.50
VIT+ Positive-going input threshold voltage V(SENSEx) rising 1.194 V
–1% 1%
VIT– Negative-going input threshold voltage V(SENSEx) falling TPS37xxA-Q1
(0.5% hysteresis)		 1.188 V
TPS37xxB-Q1
(5% hysteresis)		 1.134
TPS37xxC-Q1
(10% hysteresis)		 1.074
V(SENSEx) falling –1% 1%
I(SENSEx) Input current V(SENSEx) = 0 V or VDD –15 15 nA
VOL Low-level output voltage VDD ≥ 1.5 V, ISINK = 0.4 mA 0.25 V
VDD ≥ 2.7 V, ISINK = 2 mA 0.25
VDD ≥ 4.5 V, ISINK = 3.2 mA 0.30
VOH High-level output voltage
(TPS3779-Q1 only)		 VDD ≥ 1.5 V, ISOURCE = 0.4 mA 0.8 VDD V
VDD ≥ 2.7 V, ISOURCE = 1 mA 0.8 VDD
VDD ≥ 4.5 V, ISOURCE = 2.5 mA 0.8 VDD
Ilkg(OD) Open-drain output leakage current (TPS3780-Q1 only) High impedance, V(SENSEx) = V(OUTx) = 5.5 V –250 250 nA
(1) Outputs are undetermined below V(POR).

7.6 Timing Requirements

typical values are at TJ = 25°C and VDD = 3.3 V; SENSEx transitions between 0 V and 1.3 V
MIN NOM MAX UNIT
tPD(r) SENSEx (rising) to OUTx propagation delay 5.5 µs
tPD(f) SENSEx (falling) to OUTx propagation delay 10 µs
tSD Startup delay(1) 570 µs
(1) During power-on or when a VDD transient is below VDD(min), the outputs reflect the input conditions 570 µs after VDD transitions through VDD(min).
TPS3779-Q1 TPS3780-Q1 timing_di_sbvs250.gif Figure 1. Timing Diagram

7.7 Typical Characteristics

at TJ = 25°C with a 0.1-µF capacitor close to VDD (unless otherwise noted)
TPS3779-Q1 TPS3780-Q1 D001_SBVS273.gif
SENSE1 = SENSE2 = 1.5 V
Figure 2. Supply Current vs Supply Voltage
TPS3779-Q1 TPS3780-Q1 D003_SBVS273.gif
Figure 4. Sense Threshold (VIT–) Deviation vs Temperature
TPS3779-Q1 TPS3780-Q1 D018_SBVS250.gif
VDD = 5.5 V
Figure 6. Sense Threshold (VIT–)
TPS3779-Q1 TPS3780-Q1 D005_SBVS273.gif
Figure 8. Output Voltage Low vs Output Current
(VDD = 3.3 V)
TPS3779-Q1 TPS3780-Q1 D007_SBVS273.gif
Figure 10. Output Voltage High vs Output Current
(VDD = 1.5 V)
TPS3779-Q1 TPS3780-Q1 D009_SBVS273.gif
Figure 12. Output Voltage High vs Output Current
(VDD = 5.5 V)
TPS3779-Q1 TPS3780-Q1 D011_SBVS273.gif
SENSE1 = SENSE2 = 1.3 V to 0 V
Figure 14. Propagation Delay from
SENSEx Low to Output Low
TPS3779-Q1 TPS3780-Q1 D013_SBVS250.gif
High-to-low transition occurs above the curve
Figure 16. Minimum Transient Duration vs Overdrive
(VDD = 1.5 V)
TPS3779-Q1 TPS3780-Q1 D015_SBVS250.gif
Low-to-high transition occurs above the curve
Figure 18. Minimum Transient Duration vs Overdrive
(VDD = 1.5 V)
TPS3779-Q1 TPS3780-Q1 D002_SBVS273.gif
Figure 3. Sense Threshold (VIT+) Deviation vs Temperature
TPS3779-Q1 TPS3780-Q1 D017_SBVS250.gif
VDD = 5.5 V
Figure 5. Sense Threshold (VIT+)
TPS3779-Q1 TPS3780-Q1 D004_SBVS273.gif
Figure 7. Output Voltage Low vs Output Current
(VDD = 1.5 V)
TPS3779-Q1 TPS3780-Q1 D006_SBVS273.gif
Figure 9. Output Voltage Low vs Output Current
(VDD = 5.5 V)
TPS3779-Q1 TPS3780-Q1 D008_SBVS273.gif
Figure 11. Output Voltage High vs Output Current
(VDD = 3.3 V)
TPS3779-Q1 TPS3780-Q1 D010_SBVS273.gif
SENSE1 = SENSE2 = 0 V to 1.3 V
Figure 13. Propagation Delay from
SENSEx High to Output High
TPS3779-Q1 TPS3780-Q1 D012_SBVS273.gif
Figure 15. Startup Delay
TPS3779-Q1 TPS3780-Q1 D014_SBVS250.gif
High-to-low transition occurs above the curve
Figure 17. Minimum Transient Duration vs Overdrive
(VDD = 5.5 V)
TPS3779-Q1 TPS3780-Q1 D016_SBVS250.gif
Low-to-high transition occurs above the curve
Figure 19. Minimum Transient Duration vs Overdrive
(VDD = 5.5 V)