SLUSF07 December   2024 TPS4813-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, BST, SRC)
      2. 7.3.2 Capacitive Load Driving
        1. 7.3.2.1 Using Low-Power Bypass FET (G2 Drive) for Load Capacitor Charging
        2. 7.3.2.2 Using Main FET's (G1 Drive) Gate Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Undervoltage Protection (UVLO)
      5. 7.3.5 Reverse Polarity Protection
      6. 7.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Diagram
      2. 7.4.2 State Transition Timing Diagram
      3. 7.4.3 Power Down
      4. 7.4.4 Shutdown Mode
      5. 7.4.5 Low Power Mode
      6. 7.4.6 Active Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application 1: Driving Power At All Times (PAAT) Loads With Automatic Load Wakeup
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Typical Application 2: Driving Power At All Times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
      1. 8.3.1 Design Requirements
      2. 8.3.2 External Component Selection
      3. 8.3.3 Application Curves
    4. 8.4 TIDA-020065: Automotive Smart Fuse Reference Design Driving Power At All Times (PAAT) Loads With Automatic Load Wakeup, Output Bulk Capacitor Charging, Bi-directional Current Sensing and Software I2t
    5. 8.5 Power Supply Recommendations
    6. 8.6 Layout
      1. 8.6.1 Layout Guidelines
      2. 8.6.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGX|19
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input Pins VS, CS+, CS– to GND –65 100 V
SRC to GND –65 100
G1PU, G1PD, G2, BST to SRC –0.3 19
ISCP/LWU, TMR, SCP_TEST to GND –0.3 5.5
EN/UVLO, LPM, INP, CS_SEL,  V(VS) > 0 V –1 70
EN/UVLO, LPM, INP, CS_SEL, V(VS) ≤ 0 V V(VS) (70 + V(VS))
CS+ to CS– –1 100 V
FLT, WAKE to GND –1 20 V
Sink current I(FLT), I(WAKE) 10 mA
I(CS+), I(CS–), 1msec –100 100 mA
Output Pins G1PU, G1PD, G2, BST to GND –65 112 V
Operating junction temperature, Tj(2) –40 150 °C
Storage temperature, Tstg –55 150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.