SLVS839F July 2008 – October 2014 TPS54331
As EMI becomes a rising concern in more and more applications, the internal design of the TPS54331 device includes features to reduce the EMI. The high-side MOSFET gate drive is designed to reduce the PH pin voltage ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used to lower the parasitics effects.
To achieve the best EMI performance, external component selection and board layout are equally important. Follow the steps listed in the Detailed Design Procedure section to prevent potential EMI issues.