SLVS324C July   2001  – October 2020

PRODUCTION DATA

1. Features
2. Applications
3. Description
4. Revision History
5. Device Comparison Table
6. Pin Configuration and Functions
7. Specifications
8. Detailed Description
1. 8.1 Overview
2. 8.2 Functional Block Diagram
3. 8.3 Feature Description
4. 8.4 Device Functional Modes
9. Application and Implementation
1. 9.1 Application Information
2. 9.2 Typical Application
1. 9.2.1 Voltage Inverter
1. 9.2.1.1 Design Requirements
2. 9.2.1.2 Detailed Design Procedure
3. 9.2.1.3 Application Curves
3. 9.3 System Examples
10. 10Power Supply Recommendations
11. 11Layout
12. 12Device and Documentation Support
13. 13Mechanical, Packaging, and Orderable Information

#### Package Options

Refer to the PDF data sheet for device specific package drawings

• DBV|5
##### 9.2.1.2.5 Power Dissipation

As given in Section 7.4, the thermal resistance of TPS6040x is: RΘJA = 221°C/W.

The terminal resistance can be calculated using the following equation:

Equation 7.

where:

TJ is the junction temperature. TA is the ambient temperature. PD is the power that is dissipated by the device.

Equation 8.

The maximum power dissipation can be calculated using the following equation:

Equation 9. PD = VI× II - VO× IO = VI(max)× (IO + I(SUPPLY)) - VO× IO

The maximum power dissipation happens with maximum input voltage and maximum output current.

At maximum load the supply current is 0.7 mA maximum.

Equation 10. PD = 5 V × (60 mA + 0.7 mA) - 4.4 V × 60 mA = 40 mW

With this maximum rating and the thermal resistance of the device on the EVM, the maximum temperature rise above ambient temperature can be calculated using the following equation:

Equation 11. ΔTJ = RΘJA× PD = 221°C/W × 40 mW =8.8°C

This means that the internal dissipation increases TJ by <10°C.

The junction temperature of the device shall not exceed 125°C.

This means the IC can easily be used at ambient temperatures up to:

Equation 12. TA = TJ(max) -Δ TJ = 125°C/W - 10°C = 115°C