SLVSCN9B December   2014  – June 2020 TPS61175-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switching Frequency
      2. 7.3.2 Soft Start
      3. 7.3.3 Overcurrent Protection
      4. 7.3.4 Enable and Thermal Shutdown
      5. 7.3.5 Under Voltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Minimum ON Time and Pulse Skipping
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Determining the Duty Cycle
        2. 8.2.2.2 Selecting the Inductor
        3. 8.2.2.3 Computing the Maximum Output Current
        4. 8.2.2.4 Setting Output Voltage
        5. 8.2.2.5 Setting the Switching Frequency
        6. 8.2.2.6 Setting the Soft Start Time
        7. 8.2.2.7 Selecting the Schottky Diode
        8. 8.2.2.8 Selecting the Input and Output Capacitors
        9. 8.2.2.9 Compensating the Small Signal Control Loop
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6V, TA = TJ = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.9 18 V
IQ Operating quiescent current into Vin Device PWM switching without load 3.5 mA
ISD Shutdown current EN = GND 1.5 μA
VUVLO Under-voltage lockout threshold 2.5 2.7 V
Vhys Under-voltage lockout hysteresis 130 mV
ENABLE AND REFERENCE CONTROL
V(ENh) EN logic high voltage VIN = 2.9 V to 18 V 1.2 V
V(ENl) EN logic low voltage VIN = 2.9 V to 18 V 0.4 V
V(SYNh) SYN logic high voltage 1.2 V
V(SYNl) SYN logic low voltage 0.4 V
R(EN) EN pull down resistor 400 800 1600 kΩ
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
IFB Voltage feedback input bias current 200 nA
Isink Comp pin sink current VFB = VREF + 200 mV, VCOMP = 1 V 50 μA
Isource Comp pin source current VFB = VREF –200 mV, VCOMP = 1 V 130 μA
VCCLP Comp pin Clamp Voltage High Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V		 3
0.75		 V
V(CTH) Comp pin threshold Duty cycle = 0% 0.95 V
Gea Error amplifier transconductance 240 340 440 μmho
Rea Error amplifier output resistance 10 MΩ
fea Error amplifier crossover frequency 500 KHz
FREQUENCY
fS Oscillator frequency Rfreq = 480 kΩ 0.16 0.21 0.26 MHz
Rfreq = 80 kΩ 1.0 1.2 1.4
Rfreq = 40 kΩ 1.76 2.2 2.64
Dmax Maximum duty cycle VFB = 1.0 V, Rfreq = 80 kΩ 89% 93%
V(FREQ) FREQ pin voltage 1.229 V
POWER SWITCH
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V
VIN = VGS = 3.0 V		 0.13
0.13		 0.25
0.3		 Ω
ILN_NFET N-channel leakage current VDS = 40 V, TA = 25°C 1 μA
OC, OVP AND SS
ILIM N-Channel MOSFET current limit D = Dmax 3 3.8 5 A
ISS Soft start bias current VSS = 0 V 6 μA
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thysteresis Thermal shutdown threshold hysteresis 15 °C