SBVS311A November 2019 – March 2020 TPS7A54
The device internal charge pump generates a minimal amount of noise. Use a bias rail to minimize the internal charge pump noise when the internal voltage is clamped, thereby reducing the overall output noise floor.
The high-frequency components of the output voltage noise density curve are filtered out in most applications by using 10-nF to 100-nF bypass capacitors close to the load. Using a ferrite bead between the LDO output and the load input capacitors forms a pi-filter, further reducing the high-frequency noise contribution.