SLVSGG1A February   2022  – September 2022 TPS7H5005-SEP , TPS7H5006-SEP , TPS7H5007-SEP , TPS7H5008-SEP

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: All Devices
    6. 7.6  Electrical Characteristics: TPS7H5005-SEP
    7. 7.7  Electrical Characteristics: TPS7H5006-SEP
    8. 7.8  Electrical Characteristics: TPS7H5007-SEP
    9. 7.9  Electrical Characteristics: TPS7H5008-SEP
    10. 7.10 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and VLDO
      2. 8.3.2  Start-Up
      3. 8.3.3  Enable and Undervoltage Lockout (UVLO)
      4. 8.3.4  Voltage Reference
      5. 8.3.5  Error Amplifier
      6. 8.3.6  Output Voltage Programming
      7. 8.3.7  Soft Start (SS)
      8. 8.3.8  Switching Frequency and External Synchronization
        1. 8.3.8.1 Internal Oscillator Mode
        2. 8.3.8.2 External Synchronization Mode
        3. 8.3.8.3 Primary-Secondary Mode
      9. 8.3.9  Primary Switching Outputs (OUTA/OUTB)
      10. 8.3.10 Synchronous Rectifier Outputs (SRA/SRB)
      11. 8.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
      12. 8.3.12 Pulse Skipping
      13. 8.3.13 Duty Cycle Programmability
      14. 8.3.14 Current Sense and PWM Generation (CS_ILIM)
      15. 8.3.15 Hiccup Mode Operation (HICC)
      16. 8.3.16 External Fault Protection (FAULT)
      17. 8.3.17 Slope Compensation (RSC)
      18. 8.3.18 Frequency Compensation
      19. 8.3.19 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Switching Frequency
        2. 9.2.2.2  Output Voltage Programming Resistors
        3. 9.2.2.3  Dead Time
        4. 9.2.2.4  Leading Edge Blank Time
        5. 9.2.2.5  Soft-Start Capacitor
        6. 9.2.2.6  Transformer
        7. 9.2.2.7  Main Switching FETs
        8. 9.2.2.8  Synchronous Rectificier FETs
        9. 9.2.2.9  RCD Clamp
        10. 9.2.2.10 Output Inductor
        11. 9.2.2.11 Output Capacitance and Filter
        12. 9.2.2.12 Sense Resistor
        13. 9.2.2.13 Hiccup Capacitor
        14. 9.2.2.14 Frequency Compensation Components
        15. 9.2.2.15 Slope Compensation Resistor
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input VIN –0.3 16 V
RT, VSENSE, SS, RSC, COMP, PS, SP, HICC, LEB –0.3 3.3
SYNC –0.3 7.5
EN, FAULT –0.3 7.5
DCL, CS_ILIM –0.3 7.5
Output OUTA, OUTB, SRA and SRB –0.3 7.5 V
VLDO –0.3 7.5
REFCAP –0.3 3.3
TJ Junction temperature –55 150 °C
Tstg Storage temperature –65 150
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.