SNOSDE3C July   2023  – April 2024 TPS7H6003-SP , TPS7H6013-SP , TPS7H6023-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Device Options Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Quality Conformance Inspection
    8. 7.8 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage
      2. 8.3.2  Linear Regulator Operation
      3. 8.3.3  Bootstrap Operation
        1. 8.3.3.1 Bootstrap Charging
        2. 8.3.3.2 Bootstrap Capacitor
        3. 8.3.3.3 Bootstrap Diode
        4. 8.3.3.4 Bootstrap Resistor
      4. 8.3.4  High-Side Driver Startup
      5. 8.3.5  Inputs and Outputs
      6. 8.3.6  Dead Time
      7. 8.3.7  Input Interlock Protection
      8. 8.3.8  Undervoltage Lockout and Power Good (PGOOD)
      9. 8.3.9  Negative SW Voltage Transients
      10. 8.3.10 Level Shifter
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bootstrap and Bypass Capacitors
        2. 9.2.2.2 Bootstrap Diode
        3. 9.2.2.3 BP5x Overshoot and Undershoot
        4. 9.2.2.4 Gate Resistor
        5. 9.2.2.5 Dead Time Resistor
        6. 9.2.2.6 Gate Driver Losses
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • HBX|48
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Device Options Table

GENERIC PART NUMBER RADIATION RATING(1) GRADE(2) PACKAGE ORDERABLE PART NUMBER
TPS7H6003-SP TID characterization up to 100 krad(Si) and DSEE free up to LET = 75 MeV-cm2/mg QMLV-RHA 48-pin ceramic flatpack (CFP) HBX 5962R2220101VXC
None Engineering sample(3) TPS7H6003HBX/EM
TPS7H6013-SP TID characterization up to 100 krad(Si) and DSEE free up to LET = 75 MeV-cm2/mg QMLV-RHA 5962R2220102VXC
None Engineering sample(3) TPS7H6013HBX/EM
TPS7H6023-SP TID characterization up to 100 krad(Si) and DSEE free up to LET = 75 MeV-cm2/mg QMLV-RHA 5962R2220103VXC
None Engineering sample(3) TPS7H6023HBX/EM
SN0048HBX N/A Mechanical "dummy" package (no die) SN0048HBX
(1) TID is total ionizing dose and DSEE is destructive single event effects. Additional information is available in the associated TID and SEE radiation reports for the device.
(2) For additional information about part grade, view SLYB235.
(3) These units are intended for engineering evaluation only. They are processed to a non-compliant flow (such as no burn-in and only 25°C testing). These units are not suitable for qualification, production, radiation testing, or flight use. Parts are not warranted for performance over temperature or operating life.