SLLSEZ6D February   2019  – December 2023 TUSB216

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High-Speed Boost
      2. 7.3.2 RX Sensitivity
    4. 7.4 Device Functional Modes
      1. 7.4.1 Low-Speed (LS) Mode
      2. 7.4.2 Full-Speed (FS) Mode
      3. 7.4.3 High-Speed (HS) Mode
      4. 7.4.4 High-Speed Downstream Port Electrical Compliance Test Mode
      5. 7.4.5 Shutdown Mode
      6. 7.4.6 I2C Mode
      7. 7.4.7 BC 1.2 Battery Charging Controller
    5. 7.5 TUSB216 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Test Procedure to Construct USB High-speed Eye Diagram
          1. 8.2.2.1.1 For a Host Side Application
          2. 8.2.2.1.2 For a Device Side Application
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RWB|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.