Low-ESR and low-ESL capacitors must be connected close to the device between the VCCI and GND pins and between the VDD and VSS pins to support high peak currents when turning on the external power transistor.
To avoid large negative transients on the switch node VSSA (HS) pin in bridge configurations, the parasitic inductances between the source of the top transistor and the source of the bottom transistor must be minimized.
To improve noise immunity when driving the DIS pin from a distant micro-controller or high impedance source, TI recommends adding a small bypass capacitor, ≥ 1000 pF, between the DIS pin and GND.
If the dead time feature is used, TI recommends placing the programming resistor RDT and bypassing capacitor close to the DT pin of the UCC21540-Q1 to prevent noise from unintentionally coupling to the internal dead time circuit. The capacitor should be ≥ 2.2 nF.