SLUSDV7B October 2019 – March 2021 UCC23313-Q1
Refer to the PDF data sheet for device specific package drawings
The output stages of the UCC23313-Q1 family feature a pullup structure that delivers the highest peak-source current when it is most needed which is during the Miller plateau region of the power-switch turnon transition (when the power-switch drain or collector voltage experiences dV/dt). The output stage pullup structure features a P-channel MOSFET and an additional pull-up N-channel MOSFET in parallel. The function of the N-channel MOSFET is to provide a brief boost in the peak-sourcing current, enabling fast turnon. Fast turnon is accomplished by briefly turning on the N-channel MOSFET during a narrow instant when the output is changing states from low to high. The on-resistance of this N-channel MOSFET (RNMOS) is approximately 5.1 Ω when activated.
The ROH parameter is a DC measurement and is representative of the on-resistance of the P-channel device only. This parameter is only for the P-channel device because the pullup N-channel device is held in the OFF state in DC condition and is turned on only for a brief instant when the output is changing states from low to high. Therefore, the effective resistance of the UCC23313-Q1 pullup stage during this brief turnon phase is much lower than what is represented by the ROH parameter, yielding a faster turn on. The turnon-phase output resistance is the parallel combination ROH || RNMOS.
The pulldown structure in the UCC23313-Q1 is simply composed of an N-channel MOSFET. The output voltage swing between VCC and VEE provides rail-to-rail operation because of the MOS-out stage which delivers very low dropout.