SLUSDV7B October 2019 – March 2021 UCC23313-Q1
Refer to the PDF data sheet for device specific package drawings
UCC23313-Q1 is a single channel isolated gate driver, with an opto-compatible input stage, that can drive IGBTs, MOSFETs and SiC FETs. It has 4A peak output current capability with max output driver supply voltage of 33V. The inputs and the outputs are galvanically isolated. UCC23313-Q1 is offered in an industry standard 6 pin (SO6) package with >8.5mm creepage and clearance. It has a working voltage of 700-VRMS, isolation rating of 3.75 kVRMS for 60s and a surge rating of 6 kVPK. It is pin-to-pin compatible with standard opto isolated gate drivers. While standard opto isolated gate drivers use an LED as the input stage, UCC23313-Q1 uses an emulated diode (or "e-diode") as the input stage which does not use light emission to transmit signals across the isolation barrier. The input stage is isolated from the driver stage by dual, series HV SiO2 capacitors in full differential configuration that not only provides isolation but also offers best-in-class common mode transient immunity of >150kV/us. The e-diode input stage along with capacitive isolation technology gives UCC23313-Q1 several performance advantages over standard opto isolated gate drivers. They are as follows:
The signal across the isolation has an on-off keying (OOK) modulation scheme to transmit the digital data across a silicon dioxide based isolation barrier (see Figure 8-1). The transmitter sends a high-frequency carrier across the barrier to represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the signal after advanced signal conditioning and produces the output through a buffer stage. The UCC23313-Q1 also incorporates advanced circuit techniques to maximize the CMTI performance and minimize the radiated emissions from the high frequency carrier and IO buffer switching. Figure 8-2 shows conceptual detail of how the OOK scheme works.