SLUS822C June 2008 – August 2016 UCC27200-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VDD | Supply voltage | –0.3 | 20 | V | |
VLI, VHI | Input voltages on LI and HI | –0.3 | 20 | V | |
VLO | Output voltage on LO | DC | –0.3 | VDD + 0.3 | V |
Repetitive pulse < 100 ns | –2 | VDD + 0.3 | V | ||
VHO | Output voltage on HO | DC | VHS – 0.3 | VHB + 0.3 | V |
Repetitive pulse < 100 ns | VHS – 2 | VHB + 0.3, (VHB – VHS < 20) |
V | ||
VHS | HS voltage | DC | –1 | 120 | V |
Repetitive pulse < 100 ns | –5 | 120 | V | ||
VHB | HB voltage | –0.3 | 120 | V | |
HB-HS voltage | –0.3 | 20 | V | ||
Tlead | Lead temperature | Soldering, 10 seconds | 300 | °C | |
PD | Power dissipation | TA = 25°C(3) | 2.7 | W | |
TJ | Operating virtual-junction temperature | –40 | 150 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD | Supply voltage | 8 | 12 | 17 | V | |
VHS | HS voltage | –1 | 105 | V | ||
HS voltage (repetitive pulse <100 ns) | –5 | 110 | ||||
VHB | HB voltage | VHS + 8 | VHS + 17 | V | ||
VDD – 1 | 115 | |||||
Voltage slew rate on HS | 50 | V/ns | ||||
TJ | Operating junction temperature | –40 | 140 | °C | ||
TA | Operating ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | UCC2720x-Q1 | UNIT | |
---|---|---|---|
DDA (SO) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 40.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 49.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 23.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 6.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 23.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
SUPPLY CURRENTS | ||||||||
IDD | VDD quiescent current | VLI = VHI = 0 | 0.4 | 0.8 | mA | |||
IDDO | VDD operating current | UCC27200-Q1 | f = 500 kHz, CLOAD = 0 | 2.5 | 4 | mA | ||
UCC27201-Q1 | 3.8 | 5.5 | ||||||
IHB | Boot voltage quiescent current | VLI = VHI = 0 V | 0.4 | 0.8 | mA | |||
IHBO | Boot voltage operating current | f = 500 kHz, CLOAD = 0 | 2.5 | 4 | mA | |||
IHBS | HB to VSS quiescent current | VHS = VHB = 110 V | 0.0005 | 1 | μA | |||
IHBSO | HB to VSS operating current | f = 500 kHz, CLOAD = 0 | 0.1 | mA | ||||
INPUT | ||||||||
VHIT | Input rising threshold | UCC27200-Q1 | 5.8 | 8 | V | |||
VLIT | Input falling threshold | UCC27200-Q1 | 3 | 5.4 | V | |||
VIHYS | Input voltage hysteresis | UCC27200-Q1 | 0.4 | V | ||||
VHIT | Input voltage threshold | UCC27201-Q1 | 1.7 | 2.5 | V | |||
VLIT | Input voltage threshold | UCC27201-Q1 | 0.8 | 1.6 | V | |||
VIHYS | Input voltage hysteresis | UCC27201-Q1 | 100 | mV | ||||
RIN | Input pulldown resistance | 100 | 200 | 350 | kΩ | |||
UNDERVOLTAGE LOCKOUT (UVLO) PROTECTION | ||||||||
VDD rising threshold | 6.2 | 7.1 | 7.8 | V | ||||
VDD threshold hysteresis | 0.5 | V | ||||||
VHB rising threshold | 5.8 | 6.7 | 7.2 | V | ||||
VHB threshold hysteresis | 0.4 | V | ||||||
BOOTSTRAP DIODE | ||||||||
VF | Low-current forward voltage | IVDD – HB = 100 μA | 0.65 | 0.85 | V | |||
VFI | High-current forward voltage | IVDD – HB = 100 mA | 0.85 | 1.1 | ||||
RD | Dynamic resistance, ΔVF/ΔI | IVDD – HB = 100 mA and 80 mA | 0.6 | 1 | Ω | |||
LO GATE DRIVER | ||||||||
VLOL | Low level output voltage | ILO = 100 mA | 0.18 | 0.4 | V | |||
VLOH | High level output voltage | ILO = –100 mA, VLOH = VDD – VLO |
TJ = –40°C to 125°C | 0.25 | 0.4 | V | ||
TJ = –40°C to 140°C | 0.25 | 0.42 | ||||||
Peak pullup current | VLO = 0 V | 3 | A | |||||
Peak pulldown current | VLO = 12 V | 3 | A | |||||
HO GATE DRIVER | ||||||||
VHOL | Low-level output voltage | IHO = 100 mA | 0.18 | 0.4 | V | |||
VHOH | High-level output voltage | IHO = –100 mA, VHOH = VHB – VHO, |
TJ = –40°C to 125°C | 0.25 | 0.4 | V | ||
TJ = –40°C to 140°C | 0.25 | 0.42 | ||||||
Peak pullup current | VHO = 0 V | 3 | A | |||||
Peak pulldown current | VHO = 12 V | 3 | A | |||||
PROPAGATION DELAYS | ||||||||
TDLFF | VLI falling to VLO falling | CLOAD = 0 | TJ = –40°C to 125°C | 20 | 45 | ns | ||
TJ = –40°C to 140°C | 20 | 50 | ||||||
TDHFF | VHI falling to VHO falling | CLOAD = 0 | TJ = –40°C to 125°C | 20 | 45 | ns | ||
TJ = –40°C to 140°C | 20 | 50 | ||||||
TDLRR | VLI rising to VLO rising | CLOAD = 0 | TJ = –40°C to 125°C | 20 | 45 | ns | ||
TJ = –40°C to 140°C | 20 | 50 | ||||||
TDHRR | VHI rising to VHO rising | CLOAD = 0 | TJ = –40°C to 125°C | 20 | 45 | ns | ||
TJ = –40°C to 140°C | 20 | 50 | ||||||
DELAY MATCHING | ||||||||
TMON | LI ON, HI OFF | 1 | 7 | ns | ||||
TMOFF | LI OFF, HI ON | 1 | 7 | ns | ||||
OUTPUT RISE AND FALL TIME | ||||||||
tR | LO, HO | CLOAD = 1000 pF | 8 | ns | ||||
tF | LO, HO | CLOAD = 1000 pF | 7 | ns | ||||
tR | LO, HO (3 V to 9 V) | CLOAD = 0.1 μF | 0.35 | 0.6 | μs | |||
tF | LO, HO (3 V to 9 V) | CLOAD = 0.1 μF | 0.3 | 0.6 | μs | |||
MISCELLANEOUS | ||||||||
Minimum input pulse width that changes the output | 50 | ns | ||||||
Bootstrap diode turnoff time | IF = 20 mA, IREV = 0.5 A(1)(2) | 20 | ns |