SLUS746C December   2006  – April 2016 UCC27200 , UCC27201

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stages
      2. 7.3.2 Undervoltage Lockout (UVLO)
      3. 7.3.3 Level Shift
      4. 7.3.4 Boot Diode
      5. 7.3.5 Output Stages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Switching the MOSFETs
        2. 8.2.2.2 Dynamic Switching of the MOSFETs
          1. 8.2.2.2.1 Delay Matching and Narrow Pulse Widths
        3. 8.2.2.3 Boot Diode Performance
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Layout

10.1 Layout Guidelines

To improve the switching characteristics and efficiency of a design, the following layout rules must be followed.

  • Place the driver as close as possible to the MOSFETs.
  • Place the VDD and VHB (bootstrap) capacitors as close as possible to the driver.
  • Pay close attention to the GND trace. Use the thermal pad of the DDA and DRM package as GND by connecting it to the VSS pin (GND). The GND trace from the driver goes directly to the source of the MOSFET but must not be in the high current path of the MOSFET(s) drain or source current.
  • Use similar rules for the HS node as for GND for the high-side driver.
  • Use wide traces for LO and HO closely following the associated GND or HS traces. 60-mil to 100-mil width is preferable where possible.
  • Use as least two or more vias if the driver outputs or SW node must be routed from one layer to another. For GND the number of vias must be a consideration of the thermal pad requirements as well as parasitic inductance.
  • Avoid LI and HI (driver input) going close to the HS node or any other high dV/dT traces that can induce significant noise into the relatively high impedance leads.
  • Keep in mind that a poor layout can cause a significant drop in efficiency versus a good PCB layout and can even lead to decreased reliability of the whole system.

10.2 Layout Example

UCC27200 UCC27201 fig35_lus746.gif Figure 36. Example Component Placement