SLUSC72B May 2015 – March 2016 UCC27201A-Q1
PRODUCTION DATA.
PARAMETER | MIN | MAX | UNIT | ||
---|---|---|---|---|---|
VDD | Supply voltage range(1) | –0.3 | 20 | V | |
VHI, VLI | Input voltages on LI and HI | –0.3 | 20 | V | |
VLO | Output voltage on LO | DC | –0.3 | VDD + 0.3 | V |
Repetitive pulse <100 ns(2) | –2 | VDD + 0.3 | V | ||
VHO | Output voltage on HO | DC | VHS – 0.3 | VHB + 0.3 | V |
Repetitive pulse <100 ns(2) | VHS – 2 | VHB + 0.3, (VHB - VHS < 20) |
V | ||
VHS | Voltage on HS | DC | –1 | 120 | V |
Repetitive pulse <100 ns(2) | –18 | 120 | V | ||
VHB | Voltage on HB | –0.3 | 120 | V | |
Voltage on HB-HS | –0.3 | 20 | V | ||
Power dissipation at TA = 25°C (DDA package) (3) | 2.7 | W | |||
Power dissipation at TA = 25°C (DMK package) (3) | 2.6 | W | |||
Lead temperature (soldering, 10 sec.) | 300 | °C | |||
TJ | Operating virtual junction temperature | –40 | 150 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±1000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1500 | V |
PARAMETER | MIN | NOM | MAX | UNIT | |
---|---|---|---|---|---|
VDD | Supply voltage range | 8 | 12 | 17 | V |
VHS | Voltage on HS | –1 | 105 | V | |
Voltage on HS, (repetitive pulse <100 ns) | –15 | 110 | V | ||
VHB | Voltage on HB | VHS + 8, VDD –1 | VHS + 17, 115 | V | |
Vsr | Voltage slew rate on HS | 50 | V / ns | ||
TJ | Operating junction temperature range | –40 | 140 | °C |
THERMAL METRIC | DDA (SOIC-8) |
DMK (VSON) |
UNITS | |
---|---|---|---|---|
8 PINS | 10 PINS | |||
θJA | Junction-to-ambient thermal resistance | 40.5 | 41.7 | °C/W |
θJCtop | Junction-to-case (top) thermal resistance | 49.0 | 48.2 | °C/W |
θJB | Junction-to-board thermal resistance | 10.2 | 18.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 3.1 | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 9.7 | 18.4 | °C/W |
θJCbot | Junction-to-case (bottom) thermal resistance | 1.5 | 3.7 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENTS | |||||||
IDD | VDD quiescent current | VLI = VHI = 0 | 0.4 | 0.8 | mA | ||
IDDO | VDD operating current | f = 500 kHz, CLOAD = 0 | 3.8 | 5.5 | mA | ||
IHB | Boot voltage quiescent current | VLI = VHI = 0 V | 0.4 | 0.8 | mA | ||
IHBO | Boot voltage operating current | f = 500 kHz, CLOAD = 0 | 2.5 | 4 | mA | ||
IHBS | HB to VSS quiescent current | VHS = VHB = 110 V | 0.0005 | 1 | uA | ||
IHBSO | HB to VSS operating current | f = 500 kHz, CLOAD = 0 | 0.1 | mA | |||
INPUT | |||||||
VHIT | Input voltage threshold | 1.7 | 2.5 | ||||
VLIT | Input voltage threshold | 0.8 | 1.6 | ||||
VIHYS | Input voltage Hysteresis | 100 | mV | ||||
RIN | Input pulldown resistance | 100 | 200 | 350 | kΩ | ||
UNDERVOLTAGE PROTECTION (UVLO) | |||||||
VDD rising threshold | 6.2 | 7.1 | 7.8 | V | |||
VDD threshold hysteresis | 0.5 | V | |||||
VHB rising threshold | 5.8 | 6.7 | 7.2 | V | |||
VHB threshold hysteresis | 0.4 | V | |||||
BOOTSTRAP DIODE | |||||||
VF | Low-current forward voltage | I VDD – HB = 100 μA | 0.65 | 0.85 | V | ||
VFI | High-current forward voltage | I VDD – HB = 100 mA | 0.85 | 1.1 | V | ||
RD | Dynamic resistance, ΔVF/ΔI | I VDD – HB = 100 mA and 80 mA | 0.6 | 1.0 | Ω | ||
LO GATE DRIVER | |||||||
VLOL | Low level output voltage | ILO = 100 mA | 0.18 | 0.4 | V | ||
VLOH | High level output voltage | TJ = –40 to +125°C | ILO = –100 mA, VLOH = VDD - VLO | 0.25 | 0.4 | V | |
TJ = –40 to +140°C | ILO = –100 mA, VLOH = VDD - VLO | 0.25 | 0.42 | V | |||
Peak pull-up current | VLO = 0 V | 3 | A | ||||
Peak pull-down current | VLO = 12 V | 3 | A | ||||
HO GATE DRIVER | |||||||
VHOL | Low level output voltage | IHO = 100 mA | 0.18 | 0.4 | V | ||
VHOH | High level output voltage | TJ = –40 to +125°C | IHO = –100 mA, VHOH = VHB- VHO | 0.25 | 0.4 | V | |
TJ = –40 to +140°C | IHO = –100 mA, VHOH = VHB- VHO | 0.25 | 0.42 | V | |||
Peak pull-up current | VHO = 0 V | 3 | A | ||||
Peak pull-down current | VHO = 12 V | 3 | A |
PARAMETER | TEST CONDITIONS | MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
PROPAGATION DELAYS | |||||||
tDLFF | VLI falling to VLO falling | TJ = –40 to +125°C | CLOAD = 0 | 20 | 45 | ns | |
TJ = –40 to +140°C | CLOAD = 0 | 20 | 50 | ns | |||
tDHFF | VHI falling to VHO falling | TJ = -40 to +125°C | CLOAD = 0 | 20 | 45 | ns | |
TJ = –40 to +140°C | CLOAD = 0 | 20 | 50 | ns | |||
tDLRR | VLI rising to VLO rising | TJ = –40 to +125°C | CLOAD = 0 | 20 | 45 | ns | |
TJ = –40 to +140°C | CLOAD = 0 | 20 | 50 | ns | |||
tDHRR | VHI rising to VHO rising | TJ = –40 to +125°C | CLOAD = 0 | 20 | 45 | ns | |
TJ = –40 to +140°C | CLOAD = 0 | 20 | 50 | ns | |||
DELAY MATCHING | |||||||
tMON | LI ON, HI OFF | 1 | 7 | ns | |||
tMOFF | LI OFF, HI ON | 1 | 7 | ns | |||
OUTPUT RISE AND FALL TIME | |||||||
tR | LO, HO | CLOAD = 1000 pF | 8 | ns | |||
tF | LO, HO | CLOAD = 1000 pF | 7 | ns | |||
tR | LO, HO (3 V to 9 V) | CLOAD = 0.1 μF | 0.35 | 0.6 | µs | ||
tF | LO, HO (3 V to 9 V) | CLOAD = 0.1 μF | 0.3 | 0.6 | µs | ||
MISCELLANEOUS | |||||||
Minimum input pulse width that changes the output | 50 | ns | |||||
Bootstrap diode turn-off time | IF = 20 mA, IREV = 0.5 A(1) (2) | 20 | ns |