SLVSC88B August 2013 – August 2015 UCC27517A-Q1
Refer to the PDF data sheet for device specific package drawings
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27517A-Q1 device handles –5 V at input.
The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.
|PART NUMBER||PACKAGE||BODY SIZE (NOM)|
|UCC27517A-Q1||SOT-23 (5)||2.90 mm × 1.60 mm|
Changes from A Revision (September 2013) to B Revision
Changes from * Revision (August 2013) to A Revision