SLUSCR9B June   2017  – December 2020 UCC28730-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Description
        1. 7.3.1.1 VDD (Device Bias Voltage Supply)
        2. 7.3.1.2 GND (Ground)
        3. 7.3.1.3 HV (High Voltage Startup)
        4. 7.3.1.4 DRV (Gate Drive)
        5. 7.3.1.5 CBC (Cable Compensation)
        6. 7.3.1.6 VS (Voltage Sense)
        7. 7.3.1.7 CS (Current Sense)
      2. 7.3.2 Primary-Side Regulation (PSR)
      3. 7.3.3 Primary-Side Constant Voltage Regulation
      4. 7.3.4 Primary-Side Constant Current Regulation
      5. 7.3.5 Wake-Up Detection and Function
      6. 7.3.6 Valley-Switching and Valley-Skipping
      7. 7.3.7 Startup Operation
      8. 7.3.8 Fault Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stand-By Power Estimate
        2. 8.2.2.2 Input Bulk Capacitance and Minimum Bulk Voltage
        3. 8.2.2.3 Transformer Turns Ratio, Inductance, Primary-Peak Current
        4. 8.2.2.4 Transformer Parameter Verification
        5. 8.2.2.5 Output Capacitance
        6. 8.2.2.6 VDD Capacitance, CVDD
        7. 8.2.2.7 VS Resistor Divider, Line Compensation, and Cable Compensation
        8. 8.2.2.8 VS Wake-Up Detection
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
        1. 11.1.1.1  Capacitance Terms in Farads
        2. 11.1.1.2  Duty-Cycle Terms
        3. 11.1.1.3  Frequency Terms in Hertz
        4. 11.1.1.4  Current Terms in Amperes
        5. 11.1.1.5  Current and Voltage Scaling Terms
        6. 11.1.1.6  Transformer Terms
        7. 11.1.1.7  Power Terms in Watts
        8. 11.1.1.8  Resistance Terms in Ω
        9. 11.1.1.9  Timing Terms in Seconds
        10. 11.1.1.10 DC Voltage Terms in Volts
        11. 11.1.1.11 AC Voltage Terms in Volts
        12. 11.1.1.12 Efficiency Terms
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3 Do's and Don'ts

  • During no-load operation, do allow sufficient margin for variations in VDD level to avoid the UVLO shutdown threshold. Also, at no-load, keep the average switching frequency, <fSW>, greater than 2 x fSW(min) to avoid a rise in output voltage.
  • Do clean flux residue and contaminants from the PCB after assembly. Uncontrolled leakage current from VS to GND causes the output voltage to increase, while leakage current from HV or VDD to VS causes output voltage to decrease.
  • If ceramic capacitors are used for VDD, do use quality parts with X7R or X5R dielectric rated 50 V or higher to minimize reduction of capacitance due to dc-bias voltage and temperature variation.
  • Do not use leaky components if less than 5-mW stand-by input power consumption is a design requirement.
  • Do not probe the VS node with an ordinary oscilloscope probe; the probe capacitance can alter the signal and disrupt regulation. Do observe VS indirectly by probing the auxiliary winding voltage at RS1 and scaling the waveform by the VS divider ratio.