SLUSER8C June   2022  – March 2023 UCC28C50 , UCC28C51 , UCC28C52 , UCC28C53 , UCC28C54 , UCC28C55 , UCC28C56H , UCC28C56L , UCC28C57H , UCC28C57L , UCC28C58 , UCC28C59 , UCC38C50 , UCC38C51 , UCC38C52 , UCC38C53 , UCC38C54 , UCC38C55

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft-Start Timing
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Input Bulk Capacitor and Minimum Bulk Voltage
        2. 9.2.2.2  Transformer Turns Ratio and Maximum Duty Cycle
        3. 9.2.2.3  Transformer Inductance and Peak Currents
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  VREF Capacitor
        8. 9.2.2.8  RT/CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation
          1. 9.2.2.10.1 Power Stage Poles and Zeroes
          2. 9.2.2.10.2 Slope Compensation
          3. 9.2.2.10.3 Open-Loop Gain
          4. 9.2.2.10.4 Compensation Loop
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Precautions
        2. 9.4.1.2 Feedback Traces
        3. 9.4.1.3 Bypass Capacitors
        4. 9.4.1.4 Compensation Components
        5. 9.4.1.5 Traces and Ground Planes
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

OUT

The high-current output stage of the UCCx8C5x to drive the external power switch has been kept the same as the earlier devices UCC28C4x. To drive a power MOSFET directly, the totem-pole OUT driver sinks or source up to 1 A peak of current. The OUT of the UCCx8C50, UCCx8C52, UCCx8C53 UCC28C56H/L and UCC28C58 devices switch at the same frequency as the oscillator and can operate near 100% duty cycle. In the UCCx8C51, UCCx8C54, and UCCx8C55, UCC28C57H/L and UCC28C59, the switching frequency of OUT is one-half that of the oscillator due to an internal T flip-flop. This limits the maximum duty cycle in the UCCx8C51, UCCx8C54, and UCCx8C55, UCC28C57H/L and UCC28C59 to < 50%.

The UCCx8C5x family houses unique totem pole drivers exhibiting a 10-Ω impedance to the upper rail and a 5.5Ω impedance to ground, typically. This reduced impedance on the low-side switch helps minimize turn-off losses at the power MOSFET, whereas the higher turnon impedance of the high-side is intended to better match the reverse recovery characteristics of many high-speed output rectifiers. Transition times, rising and falling edges, are typically 25 nanoseconds and 20 nanoseconds, respectively, for a 10% to 90% change in voltage.

A low impedance MOS structure in parallel with a bipolar transistor, or BiCMOS construction, comprises the totem-pole output structure. This more efficient utilization of silicon delivers the high peak current required along with sharp transitions and full rail-to-rail voltage swings. Furthermore, the output stage is self-biasing, active low during under-voltage lockout type. With no VDD supply voltage present, the output actively pulls low if an attempt is made to pull the output high. This condition frequently occurs at initial power-up with a power MOSFET as the driver load.