SLPS625A November   2016  – January 2017 CSD18514Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

3 Description

This 4.1-mΩ, SON 5-mm × 6-mm, 40-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18514Q5A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10 V) 29 nC
Qgd Gate Charge Gate-to-Drain 5.0 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 6.0 mΩ
VGS = 10 V 4.1
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD18514Q5A 13-Inch Reel 2500 SON
5.00-mm × 6.00-mm
Plastic Package		 Tape and Reel
CSD18514Q5AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 50 A
Continuous Drain Current (Silicon Limited), TC = 25°C 89
Continuous Drain Current(1) 18
IDM Pulsed Drain Current(2) 237 A
PD Power Dissipation(1) 3.1 W
Power Dissipation, TC = 25°C 74
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω		 55 mJ
  1. Typical RθJA = 40°C/W on a 1-in2 , 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 1.7°C/W, pulse duration ≤ 100 μs, duty cycle
    ≤ 1%.

RDS(on) vs VGS

CSD18514Q5A D007_SLPS625.gif

Gate Charge

CSD18514Q5A D004_SLPS625A_FP.gif