SLPS383B September 2012 – October 2014 CSD18534KCS
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
This 7.6 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 19 | nC | |
Qgd | Gate Charge Gate-to-Drain | 3.1 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 10.2 | mΩ |
VGS = 10 V | 7.6 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
Device | Package | Media | Qty | Ship |
---|---|---|---|---|
CSD18534KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 73 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 52 | ||
IDM | Pulsed Drain Current (1) | 164 | A |
PD | Power Dissipation | 107 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 175 | °C |
EAS | Avalanche Energy, single pulse ID = 38 A, L = 0.1 mH, RG = 25 Ω |
72 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |