SLPS587 March   2016 CSD19505KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

CSD19505KTT FET_Pins.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10 V) 76 nC
Qgd Gate Charge Gate to Drain 11 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 2.9 mΩ
VGS = 10 V 2.6 mΩ
VGS(th) Threshold Voltage 2.6 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19505KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD19505KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 200 A
Continuous Drain Current (Silicon Limited), TC = 25°C 212 A
Continuous Drain Current (Silicon Limited), TC = 100°C 150 A
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 300 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 101 A, L = 0.1 mH, RG = 25 Ω		 510 mJ
  1. Max RθJC = 0.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

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RDS(on) vs VGS

CSD19505KTT D007_SLPS587.gif

Gate Charge

CSD19505KTT D004_SLPS587_FP.gif