SLPS431B June   2013  – December  2014 CSD22202W15

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD22202W15 Package Dimensions
    2. 7.2 Recommended Land Pattern
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZF|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Pb Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

2 Applications

  • Battery Management
  • Battery Protection
  • Load Switch Applications

3 Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View and Circuit Configuration
Pin_Map_and_Circuit_Configuration_P3.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –8 V
Qg Gate Charge Total (–4.5 V) 6.5 nC
Qgd Gate Charge Gate-to-Drain 1 nC
RDS(on) Drain-to-Source On-Resistance VGS = –2.5 V 14.5 mΩ
VGS = –4.5 V 10.2 mΩ
VGS(th) Threshold Voltage –0.8 V

Ordering Information(1)

Device Qty Media Package Ship
CSD22202W15 3000 7-Inch Reel 1.5 mm × 1.5 mm Wafer BGA Package Tape and Reel
CSD22202W15T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage –8 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1)
(Silicon Limitted)		 –10 A
Pulsed Drain Current(2) –48
IG Continuous Gate Current(3) –0.5 A
PD Power Dissipation(1) 1.5 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. RθJA = 75°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
  2. Pulse width ≤ 300 µs, duty cycle ≤ 2%
  3. Limited by gate resistance.

RDS(on) vs VGS

graph07p2_LPS400.png

Gate Charge

graph04_LPS400.png