JAJSD78A May   2017  – May 2018

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Up from Battery Without DC Source
      2. 8.3.2 Power-Up From DC Source
        1. 8.3.2.1 CHRG_OK Indicator
        2. 8.3.2.2 Input Voltage and Current Limit Setup
        3. 8.3.2.3 Battery Cell Configuration
        4. 8.3.2.4 Device Hi-Z State
      3. 8.3.3 USB On-The-Go (OTG)
      4. 8.3.4 Converter Operation
        1. 8.3.4.1 Inductor Setting through IADPT Pin
        2. 8.3.4.2 Continuous Conduction Mode (CCM)
        3. 8.3.4.3 Pulse Frequency Modulation (PFM)
      5. 8.3.5 Current and Power Monitor
        1. 8.3.5.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 8.3.5.2 High-Accuracy Power Sense Amplifier (PSYS)
      6. 8.3.6 Input Source Dynamic Power Manage
      7. 8.3.7 Two-Level Adapter Current Limit (Peak Power Mode)
      8. 8.3.8 Processor Hot Indication
        1. 8.3.8.1 PROCHOT During Low Power Mode
        2. 8.3.8.2 PROCHOT Status
      9. 8.3.9 Device Protection
        1. 8.3.9.1 Watchdog Timer
        2. 8.3.9.2 Input Overvoltage Protection (ACOV)
        3. 8.3.9.3 Input Overcurrent Protection (ACOC)
        4. 8.3.9.4 System Overvoltage Protection (SYSOVP)
        5. 8.3.9.5 Battery Overvoltage Protection (BATOVP)
        6. 8.3.9.6 Battery Short
        7. 8.3.9.7 Thermal Shutdown (TSHUT)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Forward Mode
        1. 8.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 8.4.1.2 Battery Charging
      2. 8.4.2 USB On-The-Go
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Interface
        1. 8.5.1.1 Data Validity
        2. 8.5.1.2 START and STOP Conditions
        3. 8.5.1.3 Byte Format
        4. 8.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 8.5.1.5 Slave Address and Data Direction Bit
        6. 8.5.1.6 Single Read and Write
        7. 8.5.1.7 Multi-Read and Multi-Write
        8. 8.5.1.8 Write 2-Byte I2C Commands
    6. 8.6 Register Map
      1. 8.6.1  Setting Charge and PROCHOT Options
        1. 8.6.1.1 ChargeOption0 Register (I2C address = 01/00h) [reset = E20Eh]
          1. Table 5. ChargeOption0 Register (I2C address = 01h) Field Descriptions
          2. Table 6. ChargeOption0 Register (I2C address = 00h) Field Descriptions
        2. 8.6.1.2 ChargeOption1 Register (I2C address = 31/30h) [reset = 211h]
          1. Table 7. ChargeOption1 Register (I2C address = 31h) Field Descriptions
          2. Table 8. ChargeOption1 Register (I2C address = 30h) Field Descriptions
        3. 8.6.1.3 ChargeOption2 Register (I2C address = 33/32h) [reset = 2B7]
          1. Table 9.  ChargeOption2 Register (I2C address = 33h) Field Descriptions
          2. Table 10. ChargeOption2 Register (I2C address = 32h) Field Descriptions
        4. 8.6.1.4 ChargeOption3 Register (I2C address = 35/34h) [reset = 0h]
          1. Table 11. ChargeOption3 Register (I2C address = 35h) Field Descriptions
          2. Table 12. ChargeOption3 Register (I2C address = 34h) Field Descriptions
        5. 8.6.1.5 ProchotOption0 Register (I2C address = 37/36h) [reset = 04A54h]
          1. Table 13. ProchotOption0 Register (I2C address = 37h) Field Descriptions
          2. Table 14. ProchotOption0 Register (I2C address = 36h) Field Descriptions
        6. 8.6.1.6 ProchotOption1 Register (I2C address = 39/38h) [reset = 8120h]
          1. Table 15. ProchotOption1 Register (I2C address = 39h) Field Descriptions
          2. Table 16. ProchotOption1 Register (I2C address = 38h) Field Descriptions
        7. 8.6.1.7 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
          1. Table 17. ADCOption Register (I2C address = 3Bh) Field Descriptions
          2. Table 18. ADCOption Register (I2C address = 3Ah) Field Descriptions
      2. 8.6.2  Charge and PROCHOT Status
        1. 8.6.2.1 ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
          1. Table 19. ChargerStatus Register (I2C address = 21h) Field Descriptions
          2. Table 20. ChargerStatus Register (I2C address = 20h) Field Descriptions
        2. 8.6.2.2 ProchotStatus Register (I2C address = 23/22h) [reset = 0h]
          1. Table 21. ProchotStatus Register (I2C address = 23h) Field Descriptions
          2. Table 22. ProchotStatus Register (I2C address = 22h) Field Descriptions
      3. 8.6.3  ChargeCurrent Register (I2C address = 03/02h) [reset = 0h]
        1. Table 23. Charge Current Register (14h) With 10-mΩ Sense Resistor (I2C address = 03h) Field Descriptions
        2. Table 24. Charge Current Register (14h) With 10-mΩ Sense Resistor (I2C address = 02h) Field Descriptions
        3. 8.6.3.1   Battery Pre-Charge Current Clamp
      4. 8.6.4  MaxChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
        1. Table 25. MaxChargeVoltage Register (I2C address = 05h) Field Descriptions
        2. Table 26. MaxChargeVoltage Register (I2C address = 04h) Field Descriptions
      5. 8.6.5  MinSystemVoltage Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
        1. Table 27. MinSystemVoltage Register (I2C address = 0Dh) Field Descriptions
        2. Table 28. MinSystemVoltage Register (I2C address = 0Ch) Field Descriptions
        3. 8.6.5.1   System Voltage Regulation
      6. 8.6.6  Input Current and Input Voltage Registers for Dynamic Power Management
        1. 8.6.6.1 Input Current Registers
          1. 8.6.6.1.1 IIN_HOST Register With 10-mΩ Sense Resistor (I2C address = 0F/0Eh) [reset = 4000h]
            1. Table 29. IIN_HOST Register With 10-mΩ Sense Resistor (I2C address = 0Fh) Field Descriptions
            2. Table 30. IIN_HOST Register With 10-mΩ Sense Resistor (I2C address = 0Eh) Field Descriptions
          2. 8.6.6.1.2 IIN_DPM Register With 10-mΩ Sense Resistor (I2C address = 25/24h) [reset = 0h]
            1. Table 31. IIN_DPM Register With 10-mΩ Sense Resistor (I2C address = 25h) Field Descriptions
            2. Table 32. IIN_DPM Register With 10-mΩ Sense Resistor (I2C address = 24h) Field Descriptions
          3. 8.6.6.1.3 InputVoltage Register (I2C address = 0B/0Ah) [reset = VBUS-1.28V]
            1. Table 33. InputVoltage Register (I2C address = 0Bh) Field Descriptions
            2. Table 34. InputVoltage Register (I2C address = 0Ah) Field Descriptions
      7. 8.6.7  OTGVoltage Register (I2C address = 07/06h) [reset = 0h]
        1. Table 35. OTGVoltage Register (I2C address = 07h) Field Descriptions
        2. Table 36. OTGVoltage Register (I2C address = 06h) Field Descriptions
      8. 8.6.8  OTGCurrent Register (I2C address = 09/08h) [reset = 0h]
        1. Table 37. OTGCurrent Register (I2C address = 09h) Field Descriptions
        2. Table 38. OTGCurrent Register (I2C address = 08h) Field Descriptions
      9. 8.6.9  ADCVBUS/PSYS Register (I2C address = 27/26h)
        1. Table 39. ADCVBUS/PSYS Register (I2C address = 27h) Field Descriptions
        2. Table 40. ADCVBUS/PSYS Register (I2C address = 26h) Field Descriptions
      10. 8.6.10 ADCIBAT Register (I2C address = 29/28h)
        1. Table 41. ADCIBAT Register (I2C address = 29h) Field Descriptions
        2. Table 42. ADCIBAT Register (I2C address = 28h) Field Descriptions
      11. 8.6.11 ADCIINCMPIN Register (I2C address = 2B/2Ah)
        1. Table 43. ADCIINCMPIN Register (I2C address = 2Bh) Field Descriptions
        2. Table 44. ADCIINCMPIN Register (I2C address = 2Ah) Field Descriptions
      12. 8.6.12 ADCVSYSVBAT Register (I2C address = 2D/2Ch)
        1. Table 45. ADCVSYSVBAT Register (I2C address = 2Dh) Field Descriptions
        2. Table 46. ADCVSYSVBAT Register (I2C address = 2Ch) Field Descriptions
      13. 8.6.13 ID Registers
        1. 8.6.13.1 ManufactureID Register (I2C address = 2Eh) [reset = 0040h]
          1. Table 47. ManufactureID Register Field Descriptions
        2. 8.6.13.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = 0h]
          1. Table 48. Device ID (DeviceAddress) Register Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 ACP-ACN Input Filter
        2. 9.2.2.2 Inductor Selection
        3. 9.2.2.3 Input Capacitor
        4. 9.2.2.4 Output Capacitor
        5. 9.2.2.5 Power MOSFETs Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
      1. 11.2.1 Layout Consideration of Current Path
      2. 11.2.2 Layout Consideration of Short Circuit Protection
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information
      2. 13.1.2 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

13.1.1 Packaging Information

Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish(4) MSL Peak Temp (3) Op Temp (°C) Device Marking(5)(6)
bq25703ARSNR PREVIEW WQFN RSN 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 bq25703A
bq25703ARSNT PREVIEW WQFN RSN 32 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 bq25703A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PRE_PROD Unannounced device, not in production, not available for mass market, nor on the web, samples not available.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
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(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
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(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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(4) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.
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(5) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device
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(6) Multiple Device markings will be inside parentheses. Only on Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer: The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.