JAJSFA6F July   2013  – February 2022 CSD17483F4

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YJC|3
サーマルパッド・メカニカル・データ
発注情報

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA30V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 24 V100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 10 V50nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.650.851.10V
RDS(on)Drain-to-source on-resistanceVGS = 1.8 V, IDS =0.5 A370550mΩ
VGS = 2.5 V, IDS =0.5 A240310
VGS = 4.5 V, IDS = 0.5 A200260
VGS = 8 V, IDS = 0.5 A185240
gfsTransconductanceVDS = 15 V, IDS = 0.5 A2.4S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		145190pF
CossOutput capacitance4255pF
CrssReverse transfer capacitance23pF
RGSeries gate resistance23Ω
QgGate charge total (4.5 V)VDS = 15 V, IDS = 0.5 A10101300pC
QgdGate charge gate-to-drain130pC
QgsGate charge gate-to-source220pC
Qg(th)Gate charge at Vth145pC
QossOutput chargeVDS = 15 V, VGS = 0 V1095pC
td(on)Turnon delay timeVDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A,RG = 2 Ω		3.3ns
trRise time1.3ns
td(off)Turnoff delay time10.6ns
tfFall time3.4ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.5 A, VGS = 0 V0.730.9V
QrrReverse recovery chargeVDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs1475pC
trrReverse recovery time5.5ns