SLPS319C June   2012  – January 2015 CSD18501Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

4 Revision History

Changes from B Revision (October 2012) to C Revision

  • Added part number to title Go
  • Added 7-inch reel to Ordering Information table Go
  • Increased silicon limited continuous drain current to 161 A Go
  • Increased pulsed drain current to 400 A Go
  • Added line for max power dissipation with case temperature held to 25° CGo
  • Updated pulsed current conditions Go
  • Updated Figure 1 to a normalized RθJC curve Go
  • Updated the SOA in Figure 9Go
  • Added Recommended Stencil Opening Go

Changes from A Revision (June 2012) to B Revision

  • Changed the Transconductance TYP value From: 142 S To: 118 S.Go
  • Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: IDS = 25 A, RG = 2 Ω To: IDS = 25 A, RG = 0 ΩGo
  • Changed the Qrr Reverse Recovery Charge TYP value From: 21 nC To: 70 nCGo

Changes from * Revision (June 2012) to A Revision

  • Added "TA = 25°C" to the Product Summary table Go