SLPS368A September   2012  – January 2015 CSD18503KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • KCS|3
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 40 V, 3.6 mΩ, TO-220 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

TO220p2.png
FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10 V) 30 nC
Qgd Gate Charge Gate-to-Drain 4.6 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 5.4 mΩ
VGS = 10 V 3.6 mΩ
VGS(th) Threshold Voltage 1.9 V

Ordering Information (1)

Device Package Media Qty Ship
CSD18503KCS TO-220 Plastic Package Tube 50 Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 142
Continuous Drain Current (Silicon limited), TC = 100°C 100
IDM Pulsed Drain Current (1) 358 A
PD Power Dissipation 188 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 57 A, L = 0.1 mH, RG = 25 Ω		 162 mJ
  1. Max RθJC = 0.8ºC/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS368.png

Gate Charge

graph04_SLPS368.png