SLPS362C September   2012  – June 2015 CSD18533KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

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メカニカル・データ(パッケージ|ピン)
  • KCS|3
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発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.9 2.3 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 75 A 6.9 9.0
VGS = 10 V, ID = 75 A 5.0 6.3
gfs Transconductance VDS = 30 V, ID = 75 A 150 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 2420 3025 pF
Coss Output capacitance 300 375 pF
Crss Reverse transfer capacitance 7 9.1 pF
RG Series gate resistance 1.4 2.8 Ω
Qg Gate charge total (4.5 V) VDS = 30 V, ID = 75 A 14 17 nC
Qg Gate charge total (10 V) 28 34 nC
Qgd Gate charge gate-to-drain 3.9 nC
Qgs Gate charge gate-to-source 9.4 nC
Qg(th) Gate charge at Vth 4.6 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 31 nC
td(on) Turn on delay time VDS = 30 V, VGS = 10 V,
IDS = 75 A, RG = 0 Ω
5.7 ns
tr Rise time 4.8 ns
td(off) Turn off delay time 13 ns
tf Fall time 3.2 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 75 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS= 30 V, IF = 75 A,
di/dt = 300 A/μs
97 nC
trr Reverse recovery time 49 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.8 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18533KCS D001_SLPS362.png
Figure 1. Transient Thermal Impedance
CSD18533KCS D002_SLPS362.gif
Figure 2. Saturation Characteristics
CSD18533KCS D003_SLPS362.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18533KCS D004_SLPS362.gif
ID = 75 A VDS = 30 V
Figure 4. Gate Charge
CSD18533KCS D006_SLPS362.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18533KCS D008_SLPS362.gif
ID = 75 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18533KCS D010_SLPS362.gif
Single Pulse, Max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
CSD18533KCS D012_SLPS362.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18533KCS D005_SLPS362.gif
Figure 5. Capacitance
CSD18533KCS D007_SLPS362.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18533KCS D009_SLPS362.gif
Figure 9. Typical Diode Forward Voltage
CSD18533KCS D011_SLPS362.gif
Figure 11. Single Pulse Unclamped Inductive Switching