JAJSC66B May 2016 – February 2022 CSD18541F5
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 μA | 60 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 48 V | 1 | µA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 10 | µA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 1.4 | 1.75 | 2.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, IDS = 1 A | 57 | 75 | mΩ | ||
| VGS = 10 V, IDS = 1 A | 54 | 65 | |||||
| gfs | Transconductance | VDS = 6 V, IDS = 1 A | 7.7 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 598 | 777 | pF | ||
| Coss | Output capacitance | 47 | 61 | pF | |||
| Crss | Reverse transfer capacitance | 8.1 | 10.5 | pF | |||
| RG | Series gate resistance | 1200 | 1600 | Ω | |||
| Qg | Gate charge total (10 V) | VDS = 30 V, IDS = 1 A | 11 | 14 | nC | ||
| Qgd | Gate charge gate-to-drain | 1.6 | nC | ||||
| Qgs | Gate charge gate-to-source | 1.5 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.8 | nC | ||||
| Qoss | Output charge | VDS = 30 V, VGS = 0 V | 3.2 | nC | |||
| td(on) | Turnon delay time | VDS = 30 V, VGS = 4.5 V, IDS = 1 A, RG = 0 Ω | 572 | ns | |||
| tr | Rise time | 540 | ns | ||||
| td(off) | Turnoff delay time | 1076 | ns | ||||
| tf | Fall time | 496 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 1 A, VGS = 0 V | 0.8 | 1 | V | ||