SLPS557 June   2015 CSD18542KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • KCS|3
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 100 A 4.0 5.1
VGS = 10 V, ID = 100 A 3.3 4.0
gfs Transconductance VDS = 30 V, ID = 100 A 198 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3900 5070 pF
Coss Output capacitance 570 740 pF
Crss Reverse transfer capacitance 11 14 pF
RG Series gate resistance 1.3 2.6 Ω
Qg Gate charge total (4.5 V) VDS = 30 V, ID = 100 A 21 27 nC
Qg Gate charge total (10 V) 44 57 nC
Qgd Gate charge gate-to-drain 6.9 nC
Qgs Gate charge gate-to-source 10 nC
Qg(th) Gate charge at Vth 7.3 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 63 nC
td(on) Turn on delay time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
6 ns
tr Rise time 5 ns
td(off) Turn off delay time 18 ns
tf Fall time 21 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V
Qrr Reverse recovery charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs
148 nC
trr Reverse recovery time 53 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.6 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18542KCS D001_SLPS557.png
Figure 1. Transient Thermal Impedance
CSD18542KCS D002_SLPS557.gif
Figure 2. Saturation Characteristics
CSD18542KCS D003_SLPS557.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18542KCS D004_SLPS557.gif
ID = 100 A VDS = 30 V
Figure 4. Gate Charge
CSD18542KCS D006_SLPS557.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18542KCS D008_SLPS557.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18542KCS D010_SLPS557.gif
Single Pulse, Max RθJC = 0.6°C/W
Figure 10. Maximum Safe Operating Area
CSD18542KCS D012_SLPS557.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18542KCS D005_SLPS557.gif
Figure 5. Capacitance
CSD18542KCS D007_SLPS557.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18542KCS D009_SLPS557.gif
Figure 9. Typical Diode Forward Voltage
CSD18542KCS D011_SLPS557.gif
Figure 11. Single Pulse Unclamped Inductive Switching