SLPS485B January   2014  – October 2014 CSD19536KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
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サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 100 A 2.5 3.2 mΩ
VGS = 10 V, ID = 100 A 2.3 2.7 mΩ
gfs Transconductance VDS = 10 V, ID = 100 A 307 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 9250 12000 pF
Coss Output Capacitance 1820 2370 pF
Crss Reverse Transfer Capacitance 47 61 pF
RG Series Gate Resistance 1.4 2.8 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 100 A 118 153 nC
Qgd Gate Charge Gate to Drain 17 nC
Qgs Gate Charge Gate to Source 37 nC
Qg(th) Gate Charge at Vth 24 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 335 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 14 ns
tr Rise Time 8 ns
td(off) Turn Off Delay Time 38 ns
tf Fall Time 5 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 100 A,
di/dt = 300 A/μs		 548 nC
trr Reverse Recovery Time 110 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.4 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS485.png
Figure 1. Transient Thermal Impedance
graph02_SLPS485.png
Figure 2. Saturation Characteristics
graph03_SLPS485.png
Figure 3. Transfer Characteristics
graph04_SLPS485.png
Figure 4. Gate Charge
graph06_SLPS485.png
Figure 6. Threshold Voltage vs Temperature
graph08_SLPS485.png
Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS485B.png
Figure 10. Maximum Safe Operating Area
graph12_SLPS485.png
Figure 12. Maximum Drain Current vs Temperature
graph05_SLPS485.png
Figure 5. Capacitance
graph07_SLPS485.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS485.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS485.png
Figure 11. Single Pulse Unclamped Inductive Switching