JAJSL98B October   2020  – June 2021 LMG3522R030-Q1 , LMG3525R030-Q1

ADVANCE INFORMATION  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Delays
      2. 8.1.2 Turn-Off Delays
      3. 8.1.3 Drain Slew Rate
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Direct-Drive GaN Architecture
      2. 9.3.2 Drain-Source Voltage Capability
      3. 9.3.3 Internal Buck-Boost DC-DC Converter
      4. 9.3.4 VDD Bias Supply
      5. 9.3.5 Auxiliary LDO
      6. 9.3.6 Fault Detection
        1. 9.3.6.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.6.2 Overtemperature Shutdown
        3. 9.3.6.3 UVLO Protection
        4. 9.3.6.4 Fault Reporting
      7. 9.3.7 Drive Strength Adjustment
      8. 9.3.8 Temperature-Sensing Output
      9. 9.3.9 Sync-FET Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Power Loop Inductance
      2. 12.1.2 Signal Ground Connection
      3. 12.1.3 Bypass Capacitors
      4. 12.1.4 Switch-Node Capacitance
      5. 12.1.5 Signal Integrity
      6. 12.1.6 High-Voltage Spacing
      7. 12.1.7 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information
    1. 14.1 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RQS|52
サーマルパッド・メカニカル・データ
発注情報

10.1 Application Information

The LMG352xR030-Q1 is a power IC targeting hard-switching and soft-switching applications running up to 520V bus voltage. GaN devices offer zero reverse-recovery charge enabling high-frequency, hard-switching applications like the totem-pole PFC. Low Qoss of GaN devices also benefits soft-switching converters, such as the LLC and phase-shifted full-bridge configurations. As half-bridge configurations are the foundation of those applications, this section will describe how to use the LMG352xR030-Q1 in half-bridge configuration.