SLOS263X August   1999  – May 2020 LMV321 , LMV324 , LMV358

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions: LMV358
    2.     Pin Functions: LMV321
    3.     Pin Functions: LMV324
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: LMV321
    5. 6.5 Thermal Information: LMV324
    6. 6.6 Thermal Information: LMV358
    7. 6.7 Electrical Characteristics: VCC+ = 2.7 V
    8. 6.8 Electrical Characteristics: VCC+ = 5 V
    9. 6.9 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Unity-Gain Bandwidth
      3. 7.3.3 Slew Rate
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Typical Application
      1. 8.1.1 Design Requirements
      2. 8.1.2 Detailed Design Procedure
        1. 8.1.2.1 Amplifier Selection
        2. 8.1.2.2 Passive Component Selection
      3. 8.1.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • D|8
  • DGK|8
  • PW|8
  • DDU|8
サーマルパッド・メカニカル・データ
発注情報

Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.