SLLSEH9B October   2013  – July 2016 TPD1S414

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics (EN, ACK Pins)
    6. 6.6  Electrical Characteristics (OVP Circuit)
    7. 6.7  Timing Requirements
    8. 6.8  Switching Characteristics (nFET)
    9. 6.9  Supply Current Consumption
    10. 6.10 Thermal Shutdown Feature
    11. 6.11 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage Protection on VBUS_CON up to 30-V DC
      2. 7.3.2 Low RON nFET Switch Supports Host and Charging Mode
      3. 7.3.3 ±15-kV IEC 61000-4-2 Level 4 ESD Protection
      4. 7.3.4 100-V IEC 61000-4-5 µs Surge Protection
      5. 7.3.5 Start-Up and OVP Recovery Delay
      6. 7.3.6 Integrated Input Enable and Status Output Signal
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 VBUS_CON < VUVLO
      2. 7.4.2 VUVLO < VBUS_CON < VOVP
      3. 7.4.3 VBUS_CON > VOVP
      4. 7.4.4 OVP Operation
      5. 7.4.5 Host/OTG Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 USB VBUS Voltage Range
        2. 8.2.2.2 USB VBUS Operating Current
        3. 8.2.2.3 VBUS_CON and VBUS_SYS Capacitance
        4. 8.2.2.4 IEC 61000-4-5 100-V Open-Circuit Surge
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resource
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • YZ|12
サーマルパッド・メカニカル・データ
発注情報

7 Detailed Description

7.1 Overview

The TPD1S414 provides a single-chip ESD protection, surge protection, and overvoltage protection solution for portable USB charging and Host interfaces. It offers overvoltage protection at the VBUS_CON pin up to 30 V. The TPD1S414 also provides a ACK pin that indicates to the system if a fault condition has occurred. The TPD1S414 offers an ESD clamp and a surge clamp for VBUS_CON pin, thus eliminating the need for external TVS clamp circuits in the application.

The TPD1S414 has an internal oscillator and charge pump that controls the turnon of the internal nFET switch. The internal oscillator controls the timers that enable the charge pump and resets the open-drain ACK output. If VBUS_CON is less than VOVP, the internal charge pump is enabled. After a 15-ms internal delay, the charge-pump starts up, and turns on the internal nFET switch through a soft start. Once the nFET is completely turned ON, TPD1S414 asserts ACK pin LOW. At any time, if VBUS_CON rises above VOVP, the ACK pin is in High-Z and is pulled HIGH through external resistors. The nFET switch is turned OFF.

7.2 Functional Block Diagram

TPD1S414 fbd_sllseh9.gif

7.3 Feature Description

7.3.1 Overvoltage Protection on VBUS_CON up to 30-V DC

When the VBUS_CON voltage rises above VOVP, the internal nFET switch is turned off, removing power from the system side. VBUS_CON can tolerate up to 30-V DC. The response to overvoltage is very rapid, with the nFET switch turning off in less than 100 ns. When the VBUS_CON voltage returns back to below VOVP – VHYS_OVP, the nFET switch is turned on again after an internal delay of tOVP_RECOV (tDELAY). This time delay ensures that the VBUS_CON supply has stabilized before turning the switch back on. After tOVP_RECOV, the TPD1S414 turns on the nFET through a soft start. Once the OVP condition is cleared the nFET is turned completely on.

7.3.2 Low RON nFET Switch Supports Host and Charging Mode

The nFET switch has a total ON-resistance (RON) of 39 mΩ. This equates to a voltage drop of less than 140 mV when charging at the maximum 3.5-A current level. Such low RON helps provide maximum potential to the system as provided by an external charger or by the system when in host mode.

7.3.3 ±15-kV IEC 61000-4-2 Level 4 ESD Protection

The VBUS_CON pin can withstand ESD events up to ±15-kV Contact and Air-Gap. An ESD clamp diverts the current to ground.

7.3.4 100-V IEC 61000-4-5 µs Surge Protection

The VBUS_CON pin can withstand surge events up to 100-V open-circuit voltage (VPP), and 700 W. A precision clamp diverts the current to ground and active circuitry switches OFF the nFET earlier than 100 ns before an overvoltage can get through to VBUS_SYS.

7.3.5 Start-Up and OVP Recovery Delay

The TPD1S414 has a built-in start-up delay. Once the device has been enabled, a time tDELAY elapses before the charge pump is enabled which turns on the nFET. A manufactured preprogrammed soft start, tSS, is used when turning on the nFET with the charge pump. Once the device is enabled, these start delays, tDELAY + tSS, work together to meet the USB inrush current compliance. Similarly, after an OVP event has occurred, the device waits a time tOVP_RECOV before enabling the charge pump to turn on the nFET. The soft-start, tSS, is still used when turning on the nFET with the charge pump after an OVP event, making the total time for the nFET switch to turn on after the OVP event tOVP_RECOV + tSS.

7.3.6 Integrated Input Enable and Status Output Signal

The TPD1S414 integrates an enable signal to control the ON and OFF state of its nFET. The device also integrates an status output signal through the ACK pin which indicates whether or not a fault is occurring on the device. See the Table 2 table to understand the functionality of these pins in all of the TPD1S414's states.

7.3.7 Thermal Shutdown

The TPD1S414 family has an overtemperature protection circuit to protect against system faults or improper use. The basic function of the thermal shutdown (TSD) circuit is to sense when the junction temperature has exceeded the absolute maximum rating and shuts down the device until the junction temperature has cooled to a safe level. When in the thermal shutdown condition, the device asserts a fault by setting the ACK pin to High-Z.

7.4 Device Functional Modes

7.4.1 VBUS_CON < VUVLO

When VBUS_CON is less than VUVLO, the device is in its unpowered state. The nFET is OFF and the ACK pin is High-Z. In this state, TPD1S414 still provides IEC 61000-4-2 ±15-kV Contact/±15-kV air-gap protection and IEC 61000-4-5 100-V open-circuit surge protection.

7.4.2 VUVLO < VBUS_CON < VOVP

When VBUS_CON is greater than VUVLO and less than VOVP, the device is in its powered state. In this state, the nFET can be controlled ON and OFF through the enable pin. When the EN pin is Low, the nFET is ON and can be used for both charging and host or OTG mode. While the nFET switch is ON, the ACK pin is held Low. When the enable pin is high, the nFET switch is held OFF and the ACK pin is High-Z. In both the enable and disabled states, the TPD1S414 provides IEC 61000-4-2 ±15-kV contact/±15-kV air-gap protection and IEC 61000-4-5 100-V open-circuit surge protection.

7.4.3 VBUS_CON > VOVP

When VBUS_CON is greater than VOVP, the device is in the overvoltage protection sate. In this state, the nFET switch is forced OFF regardless of the state of the enable pin and ACK is set High-Z. VBUS_CON can handle overvoltage protection up to 30 V.

7.4.4 OVP Operation

When the VBUS_CON voltage rises above VOVP, the internal nFET switch is turned off, removing power from the system. The response is rapid, with the FET switch turning off in less than 100 ns. The ACK pin is set to High-Z when an overvoltage condition is detected and the nFET is turned OFF. This pin can be pulled up through external resistors to indicate an OVP condition. When the VBUS_CON voltage returns below VOVP – VHYS-OVP, the nFET switch is turned on again after the internal delay of tOVP_Recov. This delay time ensures that the VBUS_CON supply has stabilized before turning the switch back on. After tOVP_Recov, the TPD1S414 turns on the nFET through a soft start to ensure that the USB Inrush current compliance is met. When the OVP condition is cleared and the nFET is completely turned on, the ACK is reset LOW.

7.4.5 Host/OTG Mode

The TPD1S414's UVLO and OVP voltages are referenced to VBUS_CON voltage. In OTG mode, VBUS_SYS is driving the VBUS_CON. Under this situation, initially VBUS_CON is powered through the body diode of the nFET by VBUS_SYS. Once the UVLO threshold on VBUS_CON is met, the nFET turns on. If there is a short to ground on VBUS_CON the OTG supply is expected to limit the current.

Table 2. Device Operation

VOLTAGE CONDITION CURRENT CONDITION
VBUS_CON VBUS_SYS EN CURRENT FLOW COMMENT ACK PIN
X <VBUS_CON High No Flow Switch off High-Z
X >VBUS_CON High VBUS_SYS to VBUS_CON Switch off, current flows through the body diode High-Z
<OVP <VBUS_CON Low VBUS_CON to VBUS_SYS Current flows through the switch, normal device charging mode Low
<OVP >VBUS_CON Low VBUS_SYS to VBUS_CON Current flows through the switch, normal host mode Low
>OVP <VBUS_CON Low No Flow Switch off due to OVP High-Z
>OVP >VBUS_CON Low VBUS_SYS to VBUS_CON Switch off, current flows through the body diode High-Z
X X X No Flow/ Current through Body Diode Thermal shutdown condition High-Z
<VUVLO <VBUS_CON Low No Flow Switch off, undervoltage lockout condition High-Z