JAJS536I October 2002 – December 2016 TPS61040 , TPS61041
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltages on pin VIN (2) | –0.3 | 7 | V | |
Voltages on pins EN, FB (2) | –0.3 | VIN + 0.3 | V | |
Switch voltage on pin SW (2) | 30 | 30 | V | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage range | 1.8 | 6 | V | |
VOUT | Output voltage range | 28 | V | ||
L | Inductor(1) | 2.2 | 10 | μH | |
f | Switching frequency(1) | 1 | MHz | ||
CIN | Input capacitor (1) | 4.7 | μF | ||
COUT | Output capacitor (1) | 1 | μF | ||
TA | Operating ambient temperature | –40 | 85 | °C | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS61040 | TPS61041 | UNIT | ||||
---|---|---|---|---|---|---|---|
DBV | DDC | DRV | DBV | DRV | |||
5 PINS | 5 PINS | 6 PINS | 5 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 205.2 | 214.7 | 83.0 | 205.2 | 83.0 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 118.3 | 38.5 | 57.1 | 118.3 | 57.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 34.8 | 35.4 | 52.9 | 34.8 | 52.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 12.2 | 0.4 | 2.4 | 12.2 | 2.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 33.9 | 34.8 | 53.4 | 33.9 | 53.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | — | 26.9 | — | 26.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VIN | Input voltage range | 1.8 | 6 | V | ||
IQ | Operating quiescent current | IOUT = 0 mA, not switching, VFB = 1.3 V | 28 | 50 | μA | |
ISD | Shutdown current | EN = GND | 0.1 | 1 | μA | |
VUVLO | Undervoltage lockout threshold | 1.5 | 1.7 | V | ||
ENABLE | ||||||
VIH | EN high level input voltage | 1.3 | V | |||
VIL | EN low level input voltage | 0.4 | V | |||
II | EN input leakage current | EN = GND or VIN | 0.1 | 1 | μA | |
POWER SWITCH AND CURRENT LIMIT | ||||||
Vsw | Maximum switch voltage | 30 | V | |||
toff | Minimum off time | 250 | 400 | 550 | ns | |
ton | Maximum on time | 4 | 6 | 7.5 | μs | |
RDS(on) | MOSFET on-resistance | VIN = 2.4 V; ISW = 200 mA; TPS61040 | 600 | 1000 | mΩ | |
RDS(on) | MOSFET on-resistance | VIN = 2.4 V; ISW = 200 mA; TPS61041 | 750 | 1250 | mΩ | |
MOSFET leakage current | VSW = 28 V | 1 | 10 | μA | ||
ILIM | MOSFET current limit | TPS61040 | 350 | 400 | 450 | mA |
ILIM | MOSFET current limit | TPS61041 | 215 | 250 | 285 | mA |
OUTPUT | ||||||
VOUT | Adjustable output voltage range | VIN | 28 | V | ||
Vref | Internal voltage reference | 1.233 | V | |||
IFB | Feedback input bias current | VFB = 1.3 V | 1 | μA | ||
VFB | Feedback trip point voltage | 1.8 V ≤ VIN ≤ 6 V | 1.208 | 1.233 | 1.258 | V |
Line regulation (1) | 1.8 V ≤ VIN ≤ 6 V; VOUT = 18 V; Iload = 10 mA; CFF = not connected | 0.05 | %/V | |||
Load regulation(1) | VIN = 2.4 V; VOUT = 18 V; 0 mA ≤ IOUT ≤ 30 mA | 0.15 | %/mA |
FIGURE | |||
---|---|---|---|
η | Efficiency | vs Load current | Figure 1, Figure 2, Figure 3 |
vs Input voltage | Figure 4 | ||
IQ | Quiescent current | vs Input voltage and temperature | Figure 5 |
VFB | Feedback voltage | vs Temperature | Figure 6 |
ISW | Switch current limit | vs Temperature | Figure 7 |
ICL | Switch current limit | vs Supply voltage, TPS61041 | Figure 8 |
vs Supply voltage, TPS61040 | Figure 9 | ||
RDS(on) | RDS(on) | vs Temperature | Figure 10 |
vs Supply voltage | Figure 11 | ||
Line transient response | Figure 13 | ||
Load transient response | Figure 14 | ||
Start-up behavior | Figure 15 |