SLWS224E August   2010  – January 2016 TRF372017

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Timing Requirements - SPI: Writing Phase
    6. 6.6 Timing Requirements - SPI: Read-Back Phase
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Integer and Fractional Mode Selection
      2. 7.3.2  Description of PLL Structure
        1. 7.3.2.1 Selecting PLL Divider Values
        2. 7.3.2.2 Setup Example for Integer Mode
        3. 7.3.2.3 Setup Example for Fractional Mode
      3. 7.3.3  Fractional Mode Setup
      4. 7.3.4  Selecting the VCO and VCO Frequency Control
      5. 7.3.5  External VCO
      6. 7.3.6  VCO Test Mode
      7. 7.3.7  Lock Detect
      8. 7.3.8  Tx Divider
      9. 7.3.9  LO Divider
      10. 7.3.10 Mixer
      11. 7.3.11 Disabling Outputs
      12. 7.3.12 Power Supply Distribution
      13. 7.3.13 Carrier Feedthrough Cancellation
      14. 7.3.14 Internal Baseband Bias Voltage Generation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Powersave Mode
    5. 7.5 Register Maps
      1. 7.5.1 Serial Interface Programming Registers Definition
        1. 7.5.1.1 PLL SPI Registers
          1. 7.5.1.1.1 Register 1
          2. 7.5.1.1.2 Register 2
          3. 7.5.1.1.3 Register 3
          4. 7.5.1.1.4 Register 4
          5. 7.5.1.1.5 Register 5
          6. 7.5.1.1.6 Register 6
          7. 7.5.1.1.7 Register 7
        2. 7.5.1.2 Readback Mode
          1. 7.5.1.2.1 Readback From the Internal Registers Banks
            1. 7.5.1.2.1.1 Register 0 Write
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 DAC Interfacing With External Baseband Bias Voltage
        2. 8.2.2.2 DAC Interface Using Internal VCM Generation
        3. 8.2.2.3 LO Outputs
        4. 8.2.2.4 Loop Filter
        5. 8.2.2.5 ESD Sensitivity
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.