JAJSG66B November   2018  – March 2019 UCC21540 , UCC21541

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     機能ブロック図
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Thermal Derating Curves
    12. 7.12 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Minimum Pulses
    2. 8.2 Propagation Delay and Pulse Width Distortion
    3. 8.3 Rising and Falling Time
    4. 8.4 Input and Disable Response Time
    5. 8.5 Programmable Dead Time
    6. 8.6 Power-up UVLO Delay to OUTPUT
    7. 8.7 CMTI Testing
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC2154x
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead Time (DT) Pin
        1. 9.4.2.1 DT Pin Tied to VCCI
        2. 9.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select Dead Time Resistor and Capacitor
        3. 10.2.2.3 Select External Bootstrap Diode and its Series Resistor
        4. 10.2.2.4 Gate Driver Output Resistor
        5. 10.2.2.5 Estimating Gate Driver Power Loss
        6. 10.2.2.6 Estimating Junction Temperature
        7. 10.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.7.1 Selecting a VCCI Capacitor
          2. 10.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.7.3 Select a VDDB Capacitor
        8. 10.2.2.8 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Component Placement Considerations
      2. 12.1.2 Grounding Considerations
      3. 12.1.3 High-Voltage Considerations
      4. 12.1.4 Thermal Considerations
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 開発サポート
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 関連リンク
    5. 13.5 コミュニティ・リソース
    6. 13.6 商標
    7. 13.7 静電気放電に関する注意事項
    8. 13.8 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DW|16
サーマルパッド・メカニカル・データ
発注情報

Pin Configuration and Functions

DW Package
16-Pin SOIC
Top View
UCC21540 UCC21541 pin_slusde1.gif
DWK Package
14-Pin SOIC
Top View
UCC21540 UCC21541 pin2_slusde1.gif

Pin Functions

PIN I/O (1) Description
NAME NO.
DIS 5 I Disables both driver outputs if asserted high, enables if set low. It is recommended to tie this pin to ground if not used to achieve better noise immunity. Bypass using a ≈ 1-nF low ESR/ESL capacitor close to DIS pin when connecting to a µC with distance.
DT 6 I DT pin configuration:
  • Tying DT to VCCI disables the DT feature and allows the outputs to overlap.
  • Placing a resistor (RDT) between DT and GND adjusts dead time according to the equation: DT (in ns) = 10 × RDT (in kΩ). TI recommends bypassing this pin with a ceramic capacitor, 2.2 nF or greater, close to DT pin to achieve better noise immunity.
GND 4 P Primary-side ground reference. All signals in the primary side are referenced to this ground.
INA 1 I Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity.
INB 2 I Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity.
NC 7 - No internal connection.
For SOIC-14 DWK Package, pin 12 and pin 13 are removed.
12
13
OUTA 15 O Output of driver A. Connect to the gate of the A channel FET or IGBT.
OUTB 10 O Output of driver B. Connect to the gate of the B channel FET or IGBT.
VCCI 3 P Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible.
VCCI 8 P This pin is internally shorted to pin 3.
Preference should be given to bypassing pin 3-4 instead of pins 8-4.
VDDA 16 P Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible.
VDDB 11 P Secondary-side power for driver B. Locally decoupled to VSSB using a low ESR/ESL capacitor located as close to the device as possible.
VSSA 14 P Ground for secondary-side driver A. Ground reference for secondary side A channel.
VSSB 9 P Ground for secondary-side driver B. Ground reference for secondary side B channel.
P = power, I = input, O = output