JAJSCK3E July 2016 – November 2023 TUSB522P
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| 3-State CMOS Inputs(EQ1/2, DE1/2) | ||||||
| VIH | High-level input voltage | VCC x 0.8 | V | |||
| VIM | Mid-level input voltage | VCC / 2. | V | |||
| VIL | Low-level input voltage | VCC x 0.2 | V | |||
| VF | Floating voltage | VIN = High impedance | 0.36 x VCC | V | ||
| RPU | Internal pull-up resistance | 410 | kΩ | |||
| RPD | Internal pull-down resistance | 240 | kΩ | |||
| IIH | High-level input current | VIN = 3.6 V | 26 | µA | ||
| IIL | Low-level input current | VIN = GND, VCC = 3.6.V | –26 | µA | ||
| 2-State CMOS Input (OS1/2, EN_RXD) | ||||||
| VIH | High-level input voltage | VCC x 0.7 | V | |||
| VIL | Low-level input voltage | VCC x 0.3 | V | |||
| RPD | Internal pull-down resistance | 660 | kΩ | |||
| IIH | Low-level input current | VIN = 3.6 V | 25 | µA | ||
| IIL | Low-level input current | VIN = GND, VCC = 3.6.V | –10 | µA | ||