JAJSDX9C June   2017  – November 2018 TPS2373

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  APD Auxiliary Power Detect
      2. 7.3.2  PG Power Good (Converter Enable) Pin Interface
      3. 7.3.3  CLSA and CLSB Classification
      4. 7.3.4  DEN Detection and Enable
      5. 7.3.5  Internal Pass MOSFET
      6. 7.3.6  TPH, TPL and BT PSE Type Indicators
      7. 7.3.7  VC_IN, VC_OUT, UVLO_SEL, and Advanced PWM Startup
      8. 7.3.8  AMPS_CTL, MPS_DUTY and Automatic MPS
      9. 7.3.9  VDD Supply Voltage
      10. 7.3.10 VSS
      11. 7.3.11 Exposed Thermal PAD
    4. 7.4 Device Functional Modes
      1. 7.4.1  PoE Overview
      2. 7.4.2  Threshold Voltages
      3. 7.4.3  PoE Startup Sequence
      4. 7.4.4  Detection
      5. 7.4.5  Hardware Classification
      6. 7.4.6  Inrush and Startup
      7. 7.4.7  Maintain Power Signature
      8. 7.4.8  Advanced Startup and Converter Operation
      9. 7.4.9  PD Hotswap Operation
      10. 7.4.10 Startup and Power Management, PG and TPH, TPL, BT
      11. 7.4.11 Adapter ORing
      12. 7.4.12 Using DEN to Disable PoE
      13. 7.4.13 ORing Challenges
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Requirements
        1. 8.2.2.1  Input Bridges and Schottky Diodes
        2. 8.2.2.2  Protection, D1
        3. 8.2.2.3  Capacitor, C1
        4. 8.2.2.4  Detection Resistor, RDEN
        5. 8.2.2.5  Classification Resistors, RCLSA and RCLSB
        6. 8.2.2.6  APD Pin Divider Network RAPD1, RAPD2
        7. 8.2.2.7  Opto-isolators for TPH, TPL and BT
        8. 8.2.2.8  VC Input and Output, CVCIN and CVCOUT
        9. 8.2.2.9  UVLO Select, UVLO_SEL
        10. 8.2.2.10 Automatic MPS and MPS Duty Cycle, RMPS and RMPS_DUTY
        11. 8.2.2.11 Internal Voltage Reference, RREF
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 EMI Containment
    4. 10.4 Thermal Considerations and OTSD
    5. 10.5 ESD
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

7.3.5 Internal Pass MOSFET

RTN pin provides the negative power return path for the load. Once VVDD exceeds the UVLO threshold, the internal pass MOSFET pulls RTN to VSS. Inrush limiting prevents the RTN current from exceeding a nominal value of about 200 mA and 335 mA for the TPS2373-3 and TPS2373-4 respectively until the bulk capacitance (CBULK in Figure 30) is fully charged. Two conditions must be met to reach the end of inrush phase. The first one is when the RTN current drops below about 90% of nominal inrush current at which point the current limit is changed to 1.85 A for TPS2373-3 and 2.2 A for TPS2373-4, while the second one is to ensure a minimum inrush delay period of ~81.5 ms (tINR_DEL) from beginning of the inrush phase. The PG output becomes high impedance to signal the downstream load that the bulk capacitance is fully charged and the inrush period has been completed.

If RTN ever exceeds about 14.5 V for longer than ~1.65 ms, then the TPS2373 returns to inrush phase; note that in this particular case, the second condition described above about inrush phase duration (81.5 ms) is not applicable.